Abstract: We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial n-type GaAs/AlxGa1 – xAs (x = 0.3) nanowires (NWs) grown by molecular beam epitaxy on a p-type silicon substrate. Results revealed a significant decrease in the time of NW photoresponse recovery as compared to that in a bulk crystal upon the transition of EL2 centers from a metastable nonactive state to the normal ground state.

Original languageEnglish
Pages (from-to)835-838
Number of pages4
JournalTechnical Physics Letters
Volume45
Issue number8
DOIs
StatePublished - 1 Aug 2019

    Research areas

  • defects, gallium arsenide, molecular beam epitaxy, nanowires, photoelectric properties, semiconductors, silicon

    Scopus subject areas

  • Physics and Astronomy (miscellaneous)

ID: 51896054