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The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires. / Grigorieva, N. R.; Shtrom, I. V.; Grigoriev, R. V.; Soshnikov, I. P.; Reznik, R. R.; Samsonenko, Yu B.; Sibirev, N. V.; Cirlin, G. E.

In: Technical Physics Letters, Vol. 45, No. 8, 01.08.2019, p. 835-838.

Research output: Contribution to journal › Article › peer-review

Harvard

Grigorieva, NR, Shtrom, IV, Grigoriev, RV, Soshnikov, IP, Reznik, RR, Samsonenko, YB, Sibirev, NV & Cirlin, GE 2019, 'The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires', Technical Physics Letters, vol. 45, no. 8, pp. 835-838. https://doi.org/10.1134/S1063785019080212

APA

Grigorieva, N. R., Shtrom, I. V., Grigoriev, R. V., Soshnikov, I. P., Reznik, R. R., Samsonenko, Y. B., Sibirev, N. V., & Cirlin, G. E. (2019). The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires. Technical Physics Letters, 45(8), 835-838. https://doi.org/10.1134/S1063785019080212

Vancouver

Grigorieva NR, Shtrom IV, Grigoriev RV, Soshnikov IP, Reznik RR, Samsonenko YB et al. The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires. Technical Physics Letters. 2019 Aug 1;45(8):835-838. https://doi.org/10.1134/S1063785019080212

Author

Grigorieva, N. R. ; Shtrom, I. V. ; Grigoriev, R. V. ; Soshnikov, I. P. ; Reznik, R. R. ; Samsonenko, Yu B. ; Sibirev, N. V. ; Cirlin, G. E. / The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires. In: Technical Physics Letters. 2019 ; Vol. 45, No. 8. pp. 835-838.

BibTeX

@article{49063174358044eeb0058f2de9da3485,
title = "The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires",
abstract = "Abstract: We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial n-type GaAs/AlxGa1 – xAs (x = 0.3) nanowires (NWs) grown by molecular beam epitaxy on a p-type silicon substrate. Results revealed a significant decrease in the time of NW photoresponse recovery as compared to that in a bulk crystal upon the transition of EL2 centers from a metastable nonactive state to the normal ground state.",
keywords = "defects, gallium arsenide, molecular beam epitaxy, nanowires, photoelectric properties, semiconductors, silicon",
author = "Grigorieva, {N. R.} and Shtrom, {I. V.} and Grigoriev, {R. V.} and Soshnikov, {I. P.} and Reznik, {R. R.} and Samsonenko, {Yu B.} and Sibirev, {N. V.} and Cirlin, {G. E.}",
year = "2019",
month = aug,
day = "1",
doi = "10.1134/S1063785019080212",
language = "English",
volume = "45",
pages = "835--838",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "8",

}

RIS

TY - JOUR

T1 - The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires

AU - Grigorieva, N. R.

AU - Shtrom, I. V.

AU - Grigoriev, R. V.

AU - Soshnikov, I. P.

AU - Reznik, R. R.

AU - Samsonenko, Yu B.

AU - Sibirev, N. V.

AU - Cirlin, G. E.

PY - 2019/8/1

Y1 - 2019/8/1

N2 - Abstract: We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial n-type GaAs/AlxGa1 – xAs (x = 0.3) nanowires (NWs) grown by molecular beam epitaxy on a p-type silicon substrate. Results revealed a significant decrease in the time of NW photoresponse recovery as compared to that in a bulk crystal upon the transition of EL2 centers from a metastable nonactive state to the normal ground state.

AB - Abstract: We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial n-type GaAs/AlxGa1 – xAs (x = 0.3) nanowires (NWs) grown by molecular beam epitaxy on a p-type silicon substrate. Results revealed a significant decrease in the time of NW photoresponse recovery as compared to that in a bulk crystal upon the transition of EL2 centers from a metastable nonactive state to the normal ground state.

KW - defects

KW - gallium arsenide

KW - molecular beam epitaxy

KW - nanowires

KW - photoelectric properties

KW - semiconductors

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=85071928269&partnerID=8YFLogxK

U2 - 10.1134/S1063785019080212

DO - 10.1134/S1063785019080212

M3 - Article

AN - SCOPUS:85071928269

VL - 45

SP - 835

EP - 838

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 8

ER -

ID: 51896054