Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013 - 7.7·1015 cm-3 concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·1015 cm-3. The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·1014 cm-3. All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.
Original language | English |
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Title of host publication | Gettering and Defect Engineering in Semiconductor Technology XVI |
Editors | Peter Pichler, Peter Pichler |
Publisher | Trans Tech Publications Ltd |
Pages | 327-331 |
Number of pages | 5 |
ISBN (Print) | 9783038356080 |
DOIs | |
State | Published - 1 Jan 2016 |
Event | 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 - Bad Staffelstein, Germany Duration: 20 Sep 2015 → 25 Sep 2015 |
Name | Solid State Phenomena |
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Volume | 242 |
ISSN (Electronic) | 1662-9779 |
Conference | 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 |
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Country/Territory | Germany |
City | Bad Staffelstein |
Period | 20/09/15 → 25/09/15 |
ID: 47708992