DOI

Measurements of field emission energy distribution (FEED) by the retarding potential method have been performed for electron emission from the top of mono crystal macroemitter, made by the sublimation method, N doped (n-type) on 4 deg. off 4H-SiC wafers (0001-C). A peculiar feature, revealed from the FEED patterns is the existence of two maxima.

Original languageEnglish
Title of host publication33rd International Vacuum Nanoelectronics Conference, IVNC 2020
ISBN (Electronic)978-1-7281-9454-7
DOIs
StatePublished - Jul 2020
Event33rd International Vacuum Nanoelectronics Conference, IVNC - Lyon; France, Лион, France
Duration: 5 Jul 2020 → 9 Jul 2020
https://www.vacuumnanoelectronics.org

Publication series

Name33rd International Vacuum Nanoelectronics Conference, IVNC 2020

Conference

Conference33rd International Vacuum Nanoelectronics Conference, IVNC
Abbreviated titleIVNC
Country/TerritoryFrance
CityЛион
Period5/07/20 → 9/07/20
Internet address

    Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

    Research areas

  • Electron emission, Field emission, Retarding potential, Silicon carbide, Silicon compounds, Spectroscopy, Wide bandgap semiconductors

ID: 69857171