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The energy position of electrically active centers in the oxide layer of SIMOX structures. / Askinazi, A. Yu; Baraban, A. P.; Dmitriev, V. A.; Miloglyadova, L. V.

In: Technical Physics Letters, Vol. 28, No. 12, 01.12.2002, p. 983-985.

Research output: Contribution to journal › Article › peer-review

Harvard

Askinazi, AY, Baraban, AP, Dmitriev, VA & Miloglyadova, LV 2002, 'The energy position of electrically active centers in the oxide layer of SIMOX structures', Technical Physics Letters, vol. 28, no. 12, pp. 983-985. https://doi.org/10.1134/1.1535509

APA

Askinazi, A. Y., Baraban, A. P., Dmitriev, V. A., & Miloglyadova, L. V. (2002). The energy position of electrically active centers in the oxide layer of SIMOX structures. Technical Physics Letters, 28(12), 983-985. https://doi.org/10.1134/1.1535509

Vancouver

Askinazi AY, Baraban AP, Dmitriev VA, Miloglyadova LV. The energy position of electrically active centers in the oxide layer of SIMOX structures. Technical Physics Letters. 2002 Dec 1;28(12):983-985. https://doi.org/10.1134/1.1535509

Author

Askinazi, A. Yu ; Baraban, A. P. ; Dmitriev, V. A. ; Miloglyadova, L. V. / The energy position of electrically active centers in the oxide layer of SIMOX structures. In: Technical Physics Letters. 2002 ; Vol. 28, No. 12. pp. 983-985.

BibTeX

@article{5bcf8278e3c74809946ed29d127cf557,
title = "The energy position of electrically active centers in the oxide layer of SIMOX structures",
abstract = "Silicon-on-insulator (Si-SiO2) structures fabricated using the SIMOX technology were studied by measuring high-frequency capacitance-voltage characteristics. Based on these data, the energy position of electrically active centers in the oxide layer of SIMOX structures is estimated.",
author = "Askinazi, {A. Yu} and Baraban, {A. P.} and Dmitriev, {V. A.} and Miloglyadova, {L. V.}",
year = "2002",
month = dec,
day = "1",
doi = "10.1134/1.1535509",
language = "English",
volume = "28",
pages = "983--985",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "12",

}

RIS

TY - JOUR

T1 - The energy position of electrically active centers in the oxide layer of SIMOX structures

AU - Askinazi, A. Yu

AU - Baraban, A. P.

AU - Dmitriev, V. A.

AU - Miloglyadova, L. V.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Silicon-on-insulator (Si-SiO2) structures fabricated using the SIMOX technology were studied by measuring high-frequency capacitance-voltage characteristics. Based on these data, the energy position of electrically active centers in the oxide layer of SIMOX structures is estimated.

AB - Silicon-on-insulator (Si-SiO2) structures fabricated using the SIMOX technology were studied by measuring high-frequency capacitance-voltage characteristics. Based on these data, the energy position of electrically active centers in the oxide layer of SIMOX structures is estimated.

UR - http://www.scopus.com/inward/record.url?scp=0036954115&partnerID=8YFLogxK

U2 - 10.1134/1.1535509

DO - 10.1134/1.1535509

M3 - Article

AN - SCOPUS:0036954115

VL - 28

SP - 983

EP - 985

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 12

ER -

ID: 41086206