DOI

Silicon-on-insulator (Si-SiO2) structures fabricated using the SIMOX technology were studied by measuring high-frequency capacitance-voltage characteristics. Based on these data, the energy position of electrically active centers in the oxide layer of SIMOX structures is estimated.

Язык оригиналаанглийский
Страницы (с-по)983-985
Число страниц3
ЖурналTechnical Physics Letters
Том28
Номер выпуска12
DOI
СостояниеОпубликовано - 1 дек 2002

    Предметные области Scopus

  • Физика и астрономия (разное)

ID: 41086206