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Ternary N-based nanostructures: growth and properties. / Цырлин, Георгий Эрнстович; Резник, Родион Романович; Гридчин, Владислав Олегович.

2024 International Conference Laser Optics, ICLO 2024 - Proceedings. 2024. p. 347 (International Conference Laser Optics (ICLO)).

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Harvard

Цырлин, ГЭ, Резник, РР & Гридчин, ВО 2024, Ternary N-based nanostructures: growth and properties. in 2024 International Conference Laser Optics, ICLO 2024 - Proceedings. International Conference Laser Optics (ICLO), pp. 347, 21st International Conference Laser Optics, Санкт-Петербург, Russian Federation, 1/07/24. https://doi.org/10.1109/ICLO59702.2024.10624219

APA

Цырлин, Г. Э., Резник, Р. Р., & Гридчин, В. О. (2024). Ternary N-based nanostructures: growth and properties. In 2024 International Conference Laser Optics, ICLO 2024 - Proceedings (pp. 347). (International Conference Laser Optics (ICLO)). https://doi.org/10.1109/ICLO59702.2024.10624219

Vancouver

Цырлин ГЭ, Резник РР, Гридчин ВО. Ternary N-based nanostructures: growth and properties. In 2024 International Conference Laser Optics, ICLO 2024 - Proceedings. 2024. p. 347. (International Conference Laser Optics (ICLO)). https://doi.org/10.1109/ICLO59702.2024.10624219

Author

Цырлин, Георгий Эрнстович ; Резник, Родион Романович ; Гридчин, Владислав Олегович. / Ternary N-based nanostructures: growth and properties. 2024 International Conference Laser Optics, ICLO 2024 - Proceedings. 2024. pp. 347 (International Conference Laser Optics (ICLO)).

BibTeX

@inproceedings{f2ae444ed6a74438bc55f6b2a3d6f99a,
title = "Ternary N-based nanostructures: growth and properties",
abstract = "Nanostructures based on III-N materials are promising candidates for ultraviolet and visible light emitting devices. In particular, ternary InGaN nanowires (NWs) grown on semiconductor wafers perfectly fit to optoelectronic applications. In this paper, we will show that InGaN/Si NWs system is quite sensitive to the growth conditions and even a small change in the growth temperature leads to a significant change in morphological properties of the NWs and also shifts the photoluminescence spectra from blue to red regions with In content in the NWs increase. We will also demonstrate that, under specific growth temperatures, InGaN NWs may be grown in a form of core-shell structure where indium composition in the core is much higher than In content in the core one.",
keywords = "III-N nanostructures, MBE growth, core/shell structures, light emitters, silicon",
author = "Цырлин, {Георгий Эрнстович} and Резник, {Родион Романович} and Гридчин, {Владислав Олегович}",
note = "G. E. Cirlin, R. R. Reznik and V. O. Gridchin, {"}Ternary N-based nanostructures: growth and properties,{"} 2024 International Conference Laser Optics (ICLO), Saint Petersburg, Russian Federation, 2024, pp. 347-347, doi: 10.1109/ICLO59702.2024.10624219.; 21st International Conference Laser Optics, ICLO 2024 ; Conference date: 01-07-2024 Through 05-07-2024",
year = "2024",
month = jul,
day = "1",
doi = "10.1109/ICLO59702.2024.10624219",
language = "English",
isbn = "9798350390674",
series = "International Conference Laser Optics (ICLO)",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "347",
booktitle = "2024 International Conference Laser Optics, ICLO 2024 - Proceedings",
url = "https://laseroptics.org/, https://laseroptics.org",

}

RIS

TY - GEN

T1 - Ternary N-based nanostructures: growth and properties

AU - Цырлин, Георгий Эрнстович

AU - Резник, Родион Романович

AU - Гридчин, Владислав Олегович

N1 - Conference code: 21

PY - 2024/7/1

Y1 - 2024/7/1

N2 - Nanostructures based on III-N materials are promising candidates for ultraviolet and visible light emitting devices. In particular, ternary InGaN nanowires (NWs) grown on semiconductor wafers perfectly fit to optoelectronic applications. In this paper, we will show that InGaN/Si NWs system is quite sensitive to the growth conditions and even a small change in the growth temperature leads to a significant change in morphological properties of the NWs and also shifts the photoluminescence spectra from blue to red regions with In content in the NWs increase. We will also demonstrate that, under specific growth temperatures, InGaN NWs may be grown in a form of core-shell structure where indium composition in the core is much higher than In content in the core one.

AB - Nanostructures based on III-N materials are promising candidates for ultraviolet and visible light emitting devices. In particular, ternary InGaN nanowires (NWs) grown on semiconductor wafers perfectly fit to optoelectronic applications. In this paper, we will show that InGaN/Si NWs system is quite sensitive to the growth conditions and even a small change in the growth temperature leads to a significant change in morphological properties of the NWs and also shifts the photoluminescence spectra from blue to red regions with In content in the NWs increase. We will also demonstrate that, under specific growth temperatures, InGaN NWs may be grown in a form of core-shell structure where indium composition in the core is much higher than In content in the core one.

KW - III-N nanostructures

KW - MBE growth

KW - core/shell structures

KW - light emitters

KW - silicon

UR - https://www.mendeley.com/catalogue/b003bc4c-2d4a-324f-99a5-de3c433b5169/

U2 - 10.1109/ICLO59702.2024.10624219

DO - 10.1109/ICLO59702.2024.10624219

M3 - Conference contribution

SN - 9798350390674

T3 - International Conference Laser Optics (ICLO)

SP - 347

BT - 2024 International Conference Laser Optics, ICLO 2024 - Proceedings

T2 - 21st International Conference Laser Optics

Y2 - 1 July 2024 through 5 July 2024

ER -

ID: 124072713