Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Ternary N-based nanostructures: growth and properties. / Цырлин, Георгий Эрнстович; Резник, Родион Романович; Гридчин, Владислав Олегович.
2024 International Conference Laser Optics, ICLO 2024 - Proceedings. 2024. p. 347 (International Conference Laser Optics (ICLO)).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
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TY - GEN
T1 - Ternary N-based nanostructures: growth and properties
AU - Цырлин, Георгий Эрнстович
AU - Резник, Родион Романович
AU - Гридчин, Владислав Олегович
N1 - Conference code: 21
PY - 2024/7/1
Y1 - 2024/7/1
N2 - Nanostructures based on III-N materials are promising candidates for ultraviolet and visible light emitting devices. In particular, ternary InGaN nanowires (NWs) grown on semiconductor wafers perfectly fit to optoelectronic applications. In this paper, we will show that InGaN/Si NWs system is quite sensitive to the growth conditions and even a small change in the growth temperature leads to a significant change in morphological properties of the NWs and also shifts the photoluminescence spectra from blue to red regions with In content in the NWs increase. We will also demonstrate that, under specific growth temperatures, InGaN NWs may be grown in a form of core-shell structure where indium composition in the core is much higher than In content in the core one.
AB - Nanostructures based on III-N materials are promising candidates for ultraviolet and visible light emitting devices. In particular, ternary InGaN nanowires (NWs) grown on semiconductor wafers perfectly fit to optoelectronic applications. In this paper, we will show that InGaN/Si NWs system is quite sensitive to the growth conditions and even a small change in the growth temperature leads to a significant change in morphological properties of the NWs and also shifts the photoluminescence spectra from blue to red regions with In content in the NWs increase. We will also demonstrate that, under specific growth temperatures, InGaN NWs may be grown in a form of core-shell structure where indium composition in the core is much higher than In content in the core one.
KW - III-N nanostructures
KW - MBE growth
KW - core/shell structures
KW - light emitters
KW - silicon
UR - https://www.mendeley.com/catalogue/b003bc4c-2d4a-324f-99a5-de3c433b5169/
U2 - 10.1109/ICLO59702.2024.10624219
DO - 10.1109/ICLO59702.2024.10624219
M3 - Conference contribution
SN - 9798350390674
T3 - International Conference Laser Optics (ICLO)
SP - 347
BT - 2024 International Conference Laser Optics, ICLO 2024 - Proceedings
T2 - 21st International Conference Laser Optics
Y2 - 1 July 2024 through 5 July 2024
ER -
ID: 124072713