Standard

Synthesis and investigation of heterooxides by ML-ALE method. / Drozd, V. E.; Baraban, A. P.; Nikiforova, I. O.; Aleskovski, V. B.

In: Applied Surface Science, Vol. 112, 01.01.1997, p. 264-268.

Research output: Contribution to journal › Article › peer-review

Harvard

Drozd, VE, Baraban, AP, Nikiforova, IO & Aleskovski, VB 1997, 'Synthesis and investigation of heterooxides by ML-ALE method', Applied Surface Science, vol. 112, pp. 264-268. https://doi.org/10.1016/S0169-4332(96)01017-3

APA

Drozd, V. E., Baraban, A. P., Nikiforova, I. O., & Aleskovski, V. B. (1997). Synthesis and investigation of heterooxides by ML-ALE method. Applied Surface Science, 112, 264-268. https://doi.org/10.1016/S0169-4332(96)01017-3

Vancouver

Drozd VE, Baraban AP, Nikiforova IO, Aleskovski VB. Synthesis and investigation of heterooxides by ML-ALE method. Applied Surface Science. 1997 Jan 1;112:264-268. https://doi.org/10.1016/S0169-4332(96)01017-3

Author

Drozd, V. E. ; Baraban, A. P. ; Nikiforova, I. O. ; Aleskovski, V. B. / Synthesis and investigation of heterooxides by ML-ALE method. In: Applied Surface Science. 1997 ; Vol. 112. pp. 264-268.

BibTeX

@article{d0e5a8795b4b491fbce6f2a3b0155a9f,
title = "Synthesis and investigation of heterooxides by ML-ALE method",
abstract = "The investigation of MIS structures on silicon substrate grown by a molecular layering (ML)-atomic layer epitaxy (ALE) method has been described. Insulators consisting of an aluminum oxide matrix with 4 monolayers of heterooxides in their bulk were grown as a model of the charge trapping centers. Electrical characteristics of these samples were measured by a C-V technique. The value and the sign of the charge trapping centers were determined by growth conditions and post annealing. Kinetics of charge trapping in the heterooxides showed a strong dependence on the location of heterooxides in an aluminum oxide matrix. The largest value of a charge was obtained in the samples with heterooxides introduced to the matrix close to the silicon-insulator interface. As the intrinsic capture centers in aluminum oxide showed no traps at 77 K, heterooxides actually captured the charge.",
author = "Drozd, {V. E.} and Baraban, {A. P.} and Nikiforova, {I. O.} and Aleskovski, {V. B.}",
year = "1997",
month = jan,
day = "1",
doi = "10.1016/S0169-4332(96)01017-3",
language = "English",
volume = "112",
pages = "264--268",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Synthesis and investigation of heterooxides by ML-ALE method

AU - Drozd, V. E.

AU - Baraban, A. P.

AU - Nikiforova, I. O.

AU - Aleskovski, V. B.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The investigation of MIS structures on silicon substrate grown by a molecular layering (ML)-atomic layer epitaxy (ALE) method has been described. Insulators consisting of an aluminum oxide matrix with 4 monolayers of heterooxides in their bulk were grown as a model of the charge trapping centers. Electrical characteristics of these samples were measured by a C-V technique. The value and the sign of the charge trapping centers were determined by growth conditions and post annealing. Kinetics of charge trapping in the heterooxides showed a strong dependence on the location of heterooxides in an aluminum oxide matrix. The largest value of a charge was obtained in the samples with heterooxides introduced to the matrix close to the silicon-insulator interface. As the intrinsic capture centers in aluminum oxide showed no traps at 77 K, heterooxides actually captured the charge.

AB - The investigation of MIS structures on silicon substrate grown by a molecular layering (ML)-atomic layer epitaxy (ALE) method has been described. Insulators consisting of an aluminum oxide matrix with 4 monolayers of heterooxides in their bulk were grown as a model of the charge trapping centers. Electrical characteristics of these samples were measured by a C-V technique. The value and the sign of the charge trapping centers were determined by growth conditions and post annealing. Kinetics of charge trapping in the heterooxides showed a strong dependence on the location of heterooxides in an aluminum oxide matrix. The largest value of a charge was obtained in the samples with heterooxides introduced to the matrix close to the silicon-insulator interface. As the intrinsic capture centers in aluminum oxide showed no traps at 77 K, heterooxides actually captured the charge.

UR - http://www.scopus.com/inward/record.url?scp=0031546823&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(96)01017-3

DO - 10.1016/S0169-4332(96)01017-3

M3 - Article

AN - SCOPUS:0031546823

VL - 112

SP - 264

EP - 268

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

ID: 47619954