The investigation of MIS structures on silicon substrate grown by a molecular layering (ML)-atomic layer epitaxy (ALE) method has been described. Insulators consisting of an aluminum oxide matrix with 4 monolayers of heterooxides in their bulk were grown as a model of the charge trapping centers. Electrical characteristics of these samples were measured by a C-V technique. The value and the sign of the charge trapping centers were determined by growth conditions and post annealing. Kinetics of charge trapping in the heterooxides showed a strong dependence on the location of heterooxides in an aluminum oxide matrix. The largest value of a charge was obtained in the samples with heterooxides introduced to the matrix close to the silicon-insulator interface. As the intrinsic capture centers in aluminum oxide showed no traps at 77 K, heterooxides actually captured the charge.