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Spectral shift of the transparency line of a semiconductor multilayer resonator under pulsed laser radiation. / Ryzhov, A. A.; Belousova, I. M.; Tsyrlin, G. E.; Khrebtov, A. I.; Reznik, R. R.

Proceedings - 2016 International Conference Laser Optics, LO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. R41 7549756 (Proceedings - 2016 International Conference Laser Optics, LO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Ryzhov, AA, Belousova, IM, Tsyrlin, GE, Khrebtov, AI & Reznik, RR 2016, Spectral shift of the transparency line of a semiconductor multilayer resonator under pulsed laser radiation. in Proceedings - 2016 International Conference Laser Optics, LO 2016., 7549756, Proceedings - 2016 International Conference Laser Optics, LO 2016, Institute of Electrical and Electronics Engineers Inc., pp. R41, 2016 International Conference Laser Optics, LO 2016, St. Petersburg, Russian Federation, 26/06/16. https://doi.org/10.1109/LO.2016.7549756

APA

Ryzhov, A. A., Belousova, I. M., Tsyrlin, G. E., Khrebtov, A. I., & Reznik, R. R. (2016). Spectral shift of the transparency line of a semiconductor multilayer resonator under pulsed laser radiation. In Proceedings - 2016 International Conference Laser Optics, LO 2016 (pp. R41). [7549756] (Proceedings - 2016 International Conference Laser Optics, LO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LO.2016.7549756

Vancouver

Ryzhov AA, Belousova IM, Tsyrlin GE, Khrebtov AI, Reznik RR. Spectral shift of the transparency line of a semiconductor multilayer resonator under pulsed laser radiation. In Proceedings - 2016 International Conference Laser Optics, LO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. R41. 7549756. (Proceedings - 2016 International Conference Laser Optics, LO 2016). https://doi.org/10.1109/LO.2016.7549756

Author

Ryzhov, A. A. ; Belousova, I. M. ; Tsyrlin, G. E. ; Khrebtov, A. I. ; Reznik, R. R. / Spectral shift of the transparency line of a semiconductor multilayer resonator under pulsed laser radiation. Proceedings - 2016 International Conference Laser Optics, LO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. R41 (Proceedings - 2016 International Conference Laser Optics, LO 2016).

BibTeX

@inproceedings{8bd1cdac788248aabdd5979dd2a4f091,
title = "Spectral shift of the transparency line of a semiconductor multilayer resonator under pulsed laser radiation",
abstract = "Multilayer microresonators are of interest as low-Threshold nonlinear optical devices. Such a resonator for near IR in the form of GaAs/AlAs heterostructure was fabricated and tested. The spectral shift of its transparency line accompanied by the transmittance peak reduction was experimentally observed as a function of the laser pulse energy. Optical limiting characteristic of the resonator was measured as well.",
keywords = "limiting, nonlinear optical devices, optical films",
author = "Ryzhov, {A. A.} and Belousova, {I. M.} and Tsyrlin, {G. E.} and Khrebtov, {A. I.} and Reznik, {R. R.}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 International Conference Laser Optics, LO 2016 ; Conference date: 26-06-2016 Through 30-06-2016",
year = "2016",
month = aug,
day = "23",
doi = "10.1109/LO.2016.7549756",
language = "English",
series = "Proceedings - 2016 International Conference Laser Optics, LO 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "R41",
booktitle = "Proceedings - 2016 International Conference Laser Optics, LO 2016",
address = "United States",

}

RIS

TY - GEN

T1 - Spectral shift of the transparency line of a semiconductor multilayer resonator under pulsed laser radiation

AU - Ryzhov, A. A.

AU - Belousova, I. M.

AU - Tsyrlin, G. E.

AU - Khrebtov, A. I.

AU - Reznik, R. R.

N1 - Publisher Copyright: © 2016 IEEE.

PY - 2016/8/23

Y1 - 2016/8/23

N2 - Multilayer microresonators are of interest as low-Threshold nonlinear optical devices. Such a resonator for near IR in the form of GaAs/AlAs heterostructure was fabricated and tested. The spectral shift of its transparency line accompanied by the transmittance peak reduction was experimentally observed as a function of the laser pulse energy. Optical limiting characteristic of the resonator was measured as well.

AB - Multilayer microresonators are of interest as low-Threshold nonlinear optical devices. Such a resonator for near IR in the form of GaAs/AlAs heterostructure was fabricated and tested. The spectral shift of its transparency line accompanied by the transmittance peak reduction was experimentally observed as a function of the laser pulse energy. Optical limiting characteristic of the resonator was measured as well.

KW - limiting

KW - nonlinear optical devices

KW - optical films

UR - http://www.scopus.com/inward/record.url?scp=84987887254&partnerID=8YFLogxK

U2 - 10.1109/LO.2016.7549756

DO - 10.1109/LO.2016.7549756

M3 - Conference contribution

AN - SCOPUS:84987887254

T3 - Proceedings - 2016 International Conference Laser Optics, LO 2016

SP - R41

BT - Proceedings - 2016 International Conference Laser Optics, LO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 International Conference Laser Optics, LO 2016

Y2 - 26 June 2016 through 30 June 2016

ER -

ID: 99723716