Research output: Contribution to journal › Article › peer-review
The process of the formation of axial heterostructures in nanowires is considered on the basis of the vapor-liquid-solid model of growth. A new method of heterostructure formation in (Al, Ga)As nanowires by varying the arsenic flux is proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 1566-1568 |
| Number of pages | 3 |
| Journal | Semiconductors |
| Volume | 50 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 2016 |
| Event | International Symposium on Nanophysics and Nanoelectronics - Nizhny Novgorod Duration: 13 Mar 2016 → 17 Mar 2016 Conference number: 20 http://nanosymp.ru/ru/index http://nanosymp.ru/ru/archive |
ID: 11806882