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On a new method of heterojunction formation in III-V nanowires. / Sibirev, N. V.; Koryakin, A. A.; Dubrovskii, V. G.

In: Semiconductors, Vol. 50, No. 12, 12.2016, p. 1566-1568.

Research output: Contribution to journal › Article › peer-review

Harvard

Sibirev, NV, Koryakin, AA & Dubrovskii, VG 2016, 'On a new method of heterojunction formation in III-V nanowires', Semiconductors, vol. 50, no. 12, pp. 1566-1568. https://doi.org/10.1134/S1063782616120198

APA

Sibirev, N. V., Koryakin, A. A., & Dubrovskii, V. G. (2016). On a new method of heterojunction formation in III-V nanowires. Semiconductors, 50(12), 1566-1568. https://doi.org/10.1134/S1063782616120198

Vancouver

Sibirev NV, Koryakin AA, Dubrovskii VG. On a new method of heterojunction formation in III-V nanowires. Semiconductors. 2016 Dec;50(12):1566-1568. https://doi.org/10.1134/S1063782616120198

Author

Sibirev, N. V. ; Koryakin, A. A. ; Dubrovskii, V. G. / On a new method of heterojunction formation in III-V nanowires. In: Semiconductors. 2016 ; Vol. 50, No. 12. pp. 1566-1568.

BibTeX

@article{c1175b424990438db352d6c55e8b852f,
title = "On a new method of heterojunction formation in III-V nanowires",
abstract = "The process of the formation of axial heterostructures in nanowires is considered on the basis of the vapor-liquid-solid model of growth. A new method of heterostructure formation in (Al, Ga)As nanowires by varying the arsenic flux is proposed.",
keywords = "HETEROSTRUCTURE FORMATION, NANOWHISKERS, NANOSTRUCTURES, ABRUPTNESS, GROWTH",
author = "Sibirev, {N. V.} and Koryakin, {A. A.} and Dubrovskii, {V. G.}",
year = "2016",
month = dec,
doi = "10.1134/S1063782616120198",
language = "Английский",
volume = "50",
pages = "1566--1568",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "12",
note = "null ; Conference date: 13-03-2016 Through 17-03-2016",
url = "http://nanosymp.ru/ru/index, http://nanosymp.ru/ru/archive",

}

RIS

TY - JOUR

T1 - On a new method of heterojunction formation in III-V nanowires

AU - Sibirev, N. V.

AU - Koryakin, A. A.

AU - Dubrovskii, V. G.

N1 - Conference code: 20

PY - 2016/12

Y1 - 2016/12

N2 - The process of the formation of axial heterostructures in nanowires is considered on the basis of the vapor-liquid-solid model of growth. A new method of heterostructure formation in (Al, Ga)As nanowires by varying the arsenic flux is proposed.

AB - The process of the formation of axial heterostructures in nanowires is considered on the basis of the vapor-liquid-solid model of growth. A new method of heterostructure formation in (Al, Ga)As nanowires by varying the arsenic flux is proposed.

KW - HETEROSTRUCTURE FORMATION

KW - NANOWHISKERS

KW - NANOSTRUCTURES

KW - ABRUPTNESS

KW - GROWTH

U2 - 10.1134/S1063782616120198

DO - 10.1134/S1063782616120198

M3 - статья

VL - 50

SP - 1566

EP - 1568

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

Y2 - 13 March 2016 through 17 March 2016

ER -

ID: 11806882