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Metal/IL/TiO2/metal nanostructures as the most promising switching materials in RRAM memory Устный доклад- Филатова Е.О. / Baraban, A.P.; Selivanov, A.A.; Konashuk, A.S.; Drozd, V.E.; Filatova, E.O.

2014. 40 Abstract from 12th International Baltic Conference on Atomic Layer Deposition, Helsinki, Finland.

Research output: Contribution to conference › Abstract

Harvard

Baraban, AP, Selivanov, AA, Konashuk, AS, Drozd, VE & Filatova, EO 2014, 'Metal/IL/TiO2/metal nanostructures as the most promising switching materials in RRAM memory Устный доклад- Филатова Е.О.', 12th International Baltic Conference on Atomic Layer Deposition, Helsinki, Finland, 11/05/14 - 13/05/14 pp. 40. <http://www.aldcoe.fi/bald2014>

APA

Baraban, A. P., Selivanov, A. A., Konashuk, A. S., Drozd, V. E., & Filatova, E. O. (2014). Metal/IL/TiO2/metal nanostructures as the most promising switching materials in RRAM memory Устный доклад- Филатова Е.О.. 40. Abstract from 12th International Baltic Conference on Atomic Layer Deposition, Helsinki, Finland. http://www.aldcoe.fi/bald2014

Vancouver

Baraban AP, Selivanov AA, Konashuk AS, Drozd VE, Filatova EO. Metal/IL/TiO2/metal nanostructures as the most promising switching materials in RRAM memory Устный доклад- Филатова Е.О.. 2014. Abstract from 12th International Baltic Conference on Atomic Layer Deposition, Helsinki, Finland.

Author

Baraban, A.P. ; Selivanov, A.A. ; Konashuk, A.S. ; Drozd, V.E. ; Filatova, E.O. / Metal/IL/TiO2/metal nanostructures as the most promising switching materials in RRAM memory Устный доклад- Филатова Е.О. Abstract from 12th International Baltic Conference on Atomic Layer Deposition, Helsinki, Finland.

BibTeX

@conference{02cac01bef7e4ed8b232c9d1b1122762,
title = "Metal/IL/TiO2/metal nanostructures as the most promising switching materials in RRAM memory Устный доклад- Филатова Е.О.",
author = "A.P. Baraban and A.A. Selivanov and A.S. Konashuk and V.E. Drozd and E.O. Filatova",
year = "2014",
language = "English",
pages = "40",
note = "12th International Baltic Conference on Atomic Layer Deposition ; Conference date: 11-05-2014 Through 13-05-2014",
url = "http://www.aldcoe.fi/bald2014/",

}

RIS

TY - CONF

T1 - Metal/IL/TiO2/metal nanostructures as the most promising switching materials in RRAM memory Устный доклад- Филатова Е.О.

AU - Baraban, A.P.

AU - Selivanov, A.A.

AU - Konashuk, A.S.

AU - Drozd, V.E.

AU - Filatova, E.O.

PY - 2014

Y1 - 2014

M3 - Abstract

SP - 40

T2 - 12th International Baltic Conference on Atomic Layer Deposition

Y2 - 11 May 2014 through 13 May 2014

ER -

ID: 6814374