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MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon. / Reznik, R. R.; Ilkiv, I. V.; Kotlyar, K. P.; Grodchin, V. O.; Ubyivovk, E. V.; Dragunova, N. S.; Kryzhanovskaya, N. V.; Akopian, N.; Cirlin, G. E.
2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Conference Laser Optics (ICLO)).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
Harvard
Reznik, RR, Ilkiv, IV, Kotlyar, KP, Grodchin, VO
, Ubyivovk, EV, Dragunova, NS, Kryzhanovskaya, NV, Akopian, N & Cirlin, GE 2022,
MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon. in
2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. 2022 International Conference Laser Optics (ICLO), Institute of Electrical and Electronics Engineers Inc., 2022 International Conference Laser Optics, ICLO 2022, St. Petersburg, Russian Federation,
20/06/22.
https://doi.org/10.1109/iclo54117.2022.9839992
APA
Reznik, R. R., Ilkiv, I. V., Kotlyar, K. P., Grodchin, V. O.
, Ubyivovk, E. V., Dragunova, N. S., Kryzhanovskaya, N. V., Akopian, N., & Cirlin, G. E. (2022).
MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon. In
2022 International Conference Laser Optics, ICLO 2022 - Proceedingss (2022 International Conference Laser Optics (ICLO)). Institute of Electrical and Electronics Engineers Inc..
https://doi.org/10.1109/iclo54117.2022.9839992
Vancouver
Author
Reznik, R. R. ; Ilkiv, I. V. ; Kotlyar, K. P. ; Grodchin, V. O.
; Ubyivovk, E. V. ; Dragunova, N. S. ; Kryzhanovskaya, N. V. ; Akopian, N. ; Cirlin, G. E. /
MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon. 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Conference Laser Optics (ICLO)).
BibTeX
@inproceedings{29c3a61ec5294cad94503edd7f98f239,
title = "MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon",
abstract = "AlGaAs nanowires with InGaAs quantum dots were grown on silicon by molecular-beam epitaxy under different growth conditions for the first time. The results of physical properties studies showed that by changing the quantum dots growth time, the ratio of III materials fluxes and the growth temperature it is possible to control the size and composition of quantum dots. ",
keywords = "III-V semiconductors, molecular-beam epitaxy, nanowires, quantum dots, silicon",
author = "Reznik, {R. R.} and Ilkiv, {I. V.} and Kotlyar, {K. P.} and Grodchin, {V. O.} and Ubyivovk, {E. V.} and Dragunova, {N. S.} and Kryzhanovskaya, {N. V.} and N. Akopian and Cirlin, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Conference Laser Optics, ICLO 2022 ; Conference date: 20-06-2022 Through 24-06-2022",
year = "2022",
month = jun,
day = "20",
doi = "10.1109/iclo54117.2022.9839992",
language = "English",
isbn = "9781665466646",
series = "2022 International Conference Laser Optics (ICLO)",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 International Conference Laser Optics, ICLO 2022 - Proceedingss",
address = "United States",
}
RIS
TY - GEN
T1 - MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon
AU - Reznik, R. R.
AU - Ilkiv, I. V.
AU - Kotlyar, K. P.
AU - Grodchin, V. O.
AU - Ubyivovk, E. V.
AU - Dragunova, N. S.
AU - Kryzhanovskaya, N. V.
AU - Akopian, N.
AU - Cirlin, G. E.
N1 - Conference code: 20
PY - 2022/6/20
Y1 - 2022/6/20
N2 - AlGaAs nanowires with InGaAs quantum dots were grown on silicon by molecular-beam epitaxy under different growth conditions for the first time. The results of physical properties studies showed that by changing the quantum dots growth time, the ratio of III materials fluxes and the growth temperature it is possible to control the size and composition of quantum dots.
AB - AlGaAs nanowires with InGaAs quantum dots were grown on silicon by molecular-beam epitaxy under different growth conditions for the first time. The results of physical properties studies showed that by changing the quantum dots growth time, the ratio of III materials fluxes and the growth temperature it is possible to control the size and composition of quantum dots.
KW - III-V semiconductors
KW - molecular-beam epitaxy
KW - nanowires
KW - quantum dots
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=85136370766&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/794d7a8e-5658-3eba-a3ff-0af33b5e2ea4/
U2 - 10.1109/iclo54117.2022.9839992
DO - 10.1109/iclo54117.2022.9839992
M3 - Conference contribution
AN - SCOPUS:85136370766
SN - 9781665466646
T3 - 2022 International Conference Laser Optics (ICLO)
BT - 2022 International Conference Laser Optics, ICLO 2022 - Proceedingss
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 International Conference Laser Optics, ICLO 2022
Y2 - 20 June 2022 through 24 June 2022
ER -
