MBE growth and properties of AlGaAs nanowires with InGaAs quantum dots on silicon

DOI

https://doi.org/10.1109/iclo54117.2022.9839992
Final published version

R. R. Reznik
I. V. Ilkiv
K. P. Kotlyar
V. O. Grodchin
E. V. Ubyivovk
N. S. Dragunova
N. V. Kryzhanovskaya
N. Akopian
G. E. Cirlin

AlGaAs nanowires with InGaAs quantum dots were grown on silicon by molecular-beam epitaxy under different growth conditions for the first time. The results of physical properties studies showed that by changing the quantum dots growth time, the ratio of III materials fluxes and the growth temperature it is possible to control the size and composition of quantum dots.

Original language	English
Title of host publication	2022 International Conference Laser Optics, ICLO 2022 - Proceedingss
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665466646
ISBN (Print)	9781665466646
DOIs	https://doi.org/10.1109/iclo54117.2022.9839992
State	Published - 20 Jun 2022
Event	2022 International Conference Laser Optics, ICLO 2022 - St. Petersburg, Russia, St. Petersburg, Russian Federation Duration: 20 Jun 2022 → 24 Jun 2022 Conference number: 20

Publication series

Name	2022 International Conference Laser Optics (ICLO)

Conference

Conference	2022 International Conference Laser Optics, ICLO 2022
Abbreviated title	ICLO 2022
Country/Territory	Russian Federation
City	St. Petersburg
Period	20/06/22 → 24/06/22

Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Research areas

III-V semiconductors, molecular-beam epitaxy, nanowires, quantum dots, silicon

ID: 99879338