Research output: Contribution to journal › Conference article › peer-review
Development of vacuum microelectronics, polarized electron sources, and flat displays renewed interest in field electron emission from semiconductors. In the report some results of mathematical modeling of this phenomenon are presented with electron escape probability calculated with "electrical centroid role" for 2D layer at a surface. Advantages of such approach compared to the conventional image force account are discussed for flat and nano-tip emitters. The current-voltage plots are constructed for some promising emitters.
Original language | English |
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Pages (from-to) | 32-35 |
Number of pages | 4 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4348 |
DOIs | |
State | Published - 1 Jan 2001 |
Event | 4th International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering - St. Petersburg, Russian Federation Duration: 12 Jun 2000 → 17 Jun 2000 |
ID: 52229892