Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование
Development of vacuum microelectronics, polarized electron sources, and flat displays renewed interest in field electron emission from semiconductors. In the report some results of mathematical modeling of this phenomenon are presented with electron escape probability calculated with "electrical centroid role" for 2D layer at a surface. Advantages of such approach compared to the conventional image force account are discussed for flat and nano-tip emitters. The current-voltage plots are constructed for some promising emitters.
Язык оригинала | английский |
---|---|
Страницы (с-по) | 32-35 |
Число страниц | 4 |
Журнал | Proceedings of SPIE - The International Society for Optical Engineering |
Том | 4348 |
DOI | |
Состояние | Опубликовано - 1 янв 2001 |
Событие | 4th International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering - St. Petersburg, Российская Федерация Продолжительность: 12 июн 2000 → 17 июн 2000 |
ID: 52229892