Mathematical modeling of field electron emission from semiconductor with "electrical centroid rule"

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Mathematical modeling of field electron emission from semiconductor with "electrical centroid rule". / Denissov, V. P.; Varajun', M. I.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4348, 01.01.2001, p. 32-35.

Research output: Contribution to journal › Conference article › peer-review

Author

Denissov, V. P. ; Varajun', M. I. / Mathematical modeling of field electron emission from semiconductor with "electrical centroid rule". In: Proceedings of SPIE - The International Society for Optical Engineering. 2001 ; Vol. 4348. pp. 32-35.

BibTeX

@article{77e49eb12f064cf8a8939070d29dbd2f,

title = "Mathematical modeling of field electron emission from semiconductor with {"}electrical centroid rule{"}",

abstract = "Development of vacuum microelectronics, polarized electron sources, and flat displays renewed interest in field electron emission from semiconductors. In the report some results of mathematical modeling of this phenomenon are presented with electron escape probability calculated with {"}electrical centroid role{"} for 2D layer at a surface. Advantages of such approach compared to the conventional image force account are discussed for flat and nano-tip emitters. The current-voltage plots are constructed for some promising emitters.",

keywords = "Electrical centroid rule, Field electron emission",

author = "Denissov, {V. P.} and Varajun', {M. I.}",

year = "2001",

month = jan,

day = "1",

doi = "10.1117/12.417676",

language = "English",

volume = "4348",

pages = "32--35",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "4th International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering ; Conference date: 12-06-2000 Through 17-06-2000",

}

RIS

TY - JOUR

T1 - Mathematical modeling of field electron emission from semiconductor with "electrical centroid rule"

AU - Denissov, V. P.

AU - Varajun', M. I.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Development of vacuum microelectronics, polarized electron sources, and flat displays renewed interest in field electron emission from semiconductors. In the report some results of mathematical modeling of this phenomenon are presented with electron escape probability calculated with "electrical centroid role" for 2D layer at a surface. Advantages of such approach compared to the conventional image force account are discussed for flat and nano-tip emitters. The current-voltage plots are constructed for some promising emitters.

AB - Development of vacuum microelectronics, polarized electron sources, and flat displays renewed interest in field electron emission from semiconductors. In the report some results of mathematical modeling of this phenomenon are presented with electron escape probability calculated with "electrical centroid role" for 2D layer at a surface. Advantages of such approach compared to the conventional image force account are discussed for flat and nano-tip emitters. The current-voltage plots are constructed for some promising emitters.

KW - Electrical centroid rule

KW - Field electron emission

UR - http://www.scopus.com/inward/record.url?scp=0034942913&partnerID=8YFLogxK

U2 - 10.1117/12.417676

DO - 10.1117/12.417676

M3 - Conference article

AN - SCOPUS:0034942913

VL - 4348

SP - 32

EP - 35

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - 4th International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering

Y2 - 12 June 2000 through 17 June 2000

ER -

ID: 52229892