Manifestation of Structure and Occupation of Energy Bands in Surface Effects of Semiconductors

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Manifestation of Structure and Occupation of Energy Bands in Surface Effects of Semiconductors. / Romanov, O. V.; Yafyasov, A. M.

In: physica status solidi (a), Vol. 94, No. 1, 01.01.1986, p. 235-242.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{3dab0f61bbc847e1a2f073bf60048a23,

title = "Manifestation of Structure and Occupation of Energy Bands in Surface Effects of Semiconductors",

abstract = "A generalized theory of space charge layers is used to obtain calculation formulas for the principal electrophysical parameters of these layers in a semiconductor (charge Qsc, capacitance Csc, excess electron and hole densities ΔP and ΔN, and surface conductance σ□). Allowance is made for the degeneracy of the electron–hole gas, conduction band nonparabolicity (considered in the Kane approximation), and possible charge exchange between homogeneously distributed levels throughout the bulk of a sample and self‐consistent calculations are carried out on the basis of the effective‐mass approximation. High frequency (1 MHz) capacitance‐voltage characteristics of the “indium” subgroup of III–V compounds and CdxHg1−xTe, obtained by the complex field effect method in electrolyte, are reported.",

author = "Romanov, {O. V.} and Yafyasov, {A. M.}",

year = "1986",

month = jan,

day = "1",

doi = "10.1002/pssa.2210940128",

language = "English",

volume = "94",

pages = "235--242",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-Blackwell",

number = "1",

}

RIS

TY - JOUR

T1 - Manifestation of Structure and Occupation of Energy Bands in Surface Effects of Semiconductors

AU - Romanov, O. V.

AU - Yafyasov, A. M.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - A generalized theory of space charge layers is used to obtain calculation formulas for the principal electrophysical parameters of these layers in a semiconductor (charge Qsc, capacitance Csc, excess electron and hole densities ΔP and ΔN, and surface conductance σ□). Allowance is made for the degeneracy of the electron–hole gas, conduction band nonparabolicity (considered in the Kane approximation), and possible charge exchange between homogeneously distributed levels throughout the bulk of a sample and self‐consistent calculations are carried out on the basis of the effective‐mass approximation. High frequency (1 MHz) capacitance‐voltage characteristics of the “indium” subgroup of III–V compounds and CdxHg1−xTe, obtained by the complex field effect method in electrolyte, are reported.

AB - A generalized theory of space charge layers is used to obtain calculation formulas for the principal electrophysical parameters of these layers in a semiconductor (charge Qsc, capacitance Csc, excess electron and hole densities ΔP and ΔN, and surface conductance σ□). Allowance is made for the degeneracy of the electron–hole gas, conduction band nonparabolicity (considered in the Kane approximation), and possible charge exchange between homogeneously distributed levels throughout the bulk of a sample and self‐consistent calculations are carried out on the basis of the effective‐mass approximation. High frequency (1 MHz) capacitance‐voltage characteristics of the “indium” subgroup of III–V compounds and CdxHg1−xTe, obtained by the complex field effect method in electrolyte, are reported.

UR - http://www.scopus.com/inward/record.url?scp=0022675794&partnerID=8YFLogxK

U2 - 10.1002/pssa.2210940128

DO - 10.1002/pssa.2210940128

M3 - Article

AN - SCOPUS:0022675794

VL - 94

SP - 235

EP - 242

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

ER -

ID: 42242438