Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Manifestation of Structure and Occupation of Energy Bands in Surface Effects of Semiconductors. / Romanov, O. V.; Yafyasov, A. M.
в: physica status solidi (a), Том 94, № 1, 01.01.1986, стр. 235-242.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Manifestation of Structure and Occupation of Energy Bands in Surface Effects of Semiconductors
AU - Romanov, O. V.
AU - Yafyasov, A. M.
PY - 1986/1/1
Y1 - 1986/1/1
N2 - A generalized theory of space charge layers is used to obtain calculation formulas for the principal electrophysical parameters of these layers in a semiconductor (charge Qsc, capacitance Csc, excess electron and hole densities ΔP and ΔN, and surface conductance σ□). Allowance is made for the degeneracy of the electron–hole gas, conduction band nonparabolicity (considered in the Kane approximation), and possible charge exchange between homogeneously distributed levels throughout the bulk of a sample and self‐consistent calculations are carried out on the basis of the effective‐mass approximation. High frequency (1 MHz) capacitance‐voltage characteristics of the “indium” subgroup of III–V compounds and CdxHg1−xTe, obtained by the complex field effect method in electrolyte, are reported.
AB - A generalized theory of space charge layers is used to obtain calculation formulas for the principal electrophysical parameters of these layers in a semiconductor (charge Qsc, capacitance Csc, excess electron and hole densities ΔP and ΔN, and surface conductance σ□). Allowance is made for the degeneracy of the electron–hole gas, conduction band nonparabolicity (considered in the Kane approximation), and possible charge exchange between homogeneously distributed levels throughout the bulk of a sample and self‐consistent calculations are carried out on the basis of the effective‐mass approximation. High frequency (1 MHz) capacitance‐voltage characteristics of the “indium” subgroup of III–V compounds and CdxHg1−xTe, obtained by the complex field effect method in electrolyte, are reported.
UR - http://www.scopus.com/inward/record.url?scp=0022675794&partnerID=8YFLogxK
U2 - 10.1002/pssa.2210940128
DO - 10.1002/pssa.2210940128
M3 - Article
AN - SCOPUS:0022675794
VL - 94
SP - 235
EP - 242
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1
ER -
ID: 42242438