TY - JOUR

T1 - Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy

AU - Штром, Игорь Викторович

AU - Сибирёв, Николай Владимирович

AU - Сошников, Илья Петрович

AU - Илькив, Игорь Владимирович

AU - Убыйвовк, Евгений Викторович

AU - Резник, Родион Романович

AU - Цырлин, Георгий Эрнстович

PY - 2024/11/21

Y1 - 2024/11/21

N2 - This study investigates the growth of gallium arsenide nanowires, using lead as a catalyst. Typically, nanowires are grown through the vapor-solid-liquid mechanism, where a key factor is the reduction in the nucleation barrier beneath the catalyst droplet. Arsenic exhibits limited solubility in conventional catalysts; however, this research explores an alternative scenario in which lead serves as a solvent for arsenic, while gallium and lead are immiscible liquids. Liquid lead easily dissolves in Si as well as in GaAs. The preservation of the catalyst during the growth process is also addressed. GaAs nanowires have been grown by molecular beam epitaxy on silicon Si (111) substrates at varying temperatures. Observations indicate the spontaneous doping of the GaAs nanowires with both lead and silicon. These findings contribute to a deeper understanding of the VLS mechanism involved in nanowire growth. They are also an important step in the study of GaAs nanowire-doping processes.

AB - This study investigates the growth of gallium arsenide nanowires, using lead as a catalyst. Typically, nanowires are grown through the vapor-solid-liquid mechanism, where a key factor is the reduction in the nucleation barrier beneath the catalyst droplet. Arsenic exhibits limited solubility in conventional catalysts; however, this research explores an alternative scenario in which lead serves as a solvent for arsenic, while gallium and lead are immiscible liquids. Liquid lead easily dissolves in Si as well as in GaAs. The preservation of the catalyst during the growth process is also addressed. GaAs nanowires have been grown by molecular beam epitaxy on silicon Si (111) substrates at varying temperatures. Observations indicate the spontaneous doping of the GaAs nanowires with both lead and silicon. These findings contribute to a deeper understanding of the VLS mechanism involved in nanowire growth. They are also an important step in the study of GaAs nanowire-doping processes.

KW - catalyst

KW - crystal phase

KW - doping

KW - growth modeling

KW - semiconductor nanowires

KW - structural characterization

KW - vapor–liquid–solid growth

UR - https://www.mendeley.com/catalogue/dfa4cca9-e7f8-3756-99ab-ff7531f3793d/

U2 - 10.3390/nano14231860

DO - 10.3390/nano14231860

M3 - Article

C2 - 39683249

VL - 14

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 23

M1 - 1860

ER -