Research output: Contribution to journal › Article › peer-review
GaAs nanowire (NW) arrays were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid method with Ga droplets as seed particles. A Ga pre-deposition step is examined to control NW yield and diameter. The NW yield can be increased with suitable duration of a Ga pre-deposition step but is highly dependent on oxide hole diameter and surface conditions. The NW diameter was determined by vapor-solid growth on the NW sidewalls, rather than Ga pre-deposition. The maximum NW yield with a Ga pre-deposition step was very close to 100%, established at shorter Ga deposition durations and for larger holes. This trend was explained within a model where maximum yield is obtained when the Ga droplet volume approximately equals the hole volume.
Original language | English |
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Article number | 265301 |
Number of pages | 7 |
Journal | Nanotechnology |
Volume | 32 |
Issue number | 26 |
DOIs | |
State | Published - 25 Jun 2021 |
ID: 88770347