Research output: Contribution to journal › Article › peer-review
Growth of Three-Dimensional InGaN Nanostructures by Plasma-Assisted Molecular Beam Epitaxy. / Гридчин, Владислав Олегович; Котляр, Константин Павлович; Убыйвовк, Евгений Викторович; Лендяшова, Вера Вадимовна; Драгунова, Анна; Крыжановская, Наталия; Шевчук, Дмитрий; Резник, Родион Романович; Кукушкин, Сергей Арсеньевич; Цырлин, Георгий Эрнстович.
In: ACS Applied Nano Materials, Vol. 7, No. 15, 20.07.2024, p. 17460-17468.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Growth of Three-Dimensional InGaN Nanostructures by Plasma-Assisted Molecular Beam Epitaxy
AU - Гридчин, Владислав Олегович
AU - Котляр, Константин Павлович
AU - Убыйвовк, Евгений Викторович
AU - Лендяшова, Вера Вадимовна
AU - Драгунова, Анна
AU - Крыжановская, Наталия
AU - Шевчук, Дмитрий
AU - Резник, Родион Романович
AU - Кукушкин, Сергей Арсеньевич
AU - Цырлин, Георгий Эрнстович
N1 - Vladislav O. Gridchin, Konstantin P. Kotlyar, Evgeniy V. Ubyivovk, Vera V. Lendyashova, Anna S. Dragunova, Natalia V. Kryzhanovskaya, Dmitrii S. Shevchuk, Rodion R. Reznik, Sergey A. Kukushkin and George E. Cirlin "Growth of Three-Dimensional InGaN Nanostructures by Plasma-Assisted Molecular Beam Epitaxy" ACS Appl. Nano Mater. 2024, 7, 15, 17460–17468
PY - 2024/7/20
Y1 - 2024/7/20
N2 - A study on the formation of InGaN ternary compounds in the three-dimensional growth mode is presented. For the first time, we demonstrate that the self-organization during InGaN growth is responsible for the formation of core-shell nanowires (NWs), nanotubes, zinc blende (ZB) phases, and nanoflowers. It is found that the core-shell InGaN NWs are formed at the very initial stage of growth. An increase in growth time results in the ascending indium diffusion from the cores of NWs and their accumulation at the NW tips, enabling three-dimensional lateral growth and formation of nanotubes. Further nanostructure growth leads to the formation of nanoflowers with empty stems and ZB/wurtzite (WZ) phase interface at the periphery. The observed structural transformations of NWs are supported by transmission electron microscopy and photoluminescence measurements, as well as theoretical estimates. Understanding the formation mechanisms of these complex three-dimensional nanostructures can facilitate the development of InGaN compounds for gas-sensing applications.
AB - A study on the formation of InGaN ternary compounds in the three-dimensional growth mode is presented. For the first time, we demonstrate that the self-organization during InGaN growth is responsible for the formation of core-shell nanowires (NWs), nanotubes, zinc blende (ZB) phases, and nanoflowers. It is found that the core-shell InGaN NWs are formed at the very initial stage of growth. An increase in growth time results in the ascending indium diffusion from the cores of NWs and their accumulation at the NW tips, enabling three-dimensional lateral growth and formation of nanotubes. Further nanostructure growth leads to the formation of nanoflowers with empty stems and ZB/wurtzite (WZ) phase interface at the periphery. The observed structural transformations of NWs are supported by transmission electron microscopy and photoluminescence measurements, as well as theoretical estimates. Understanding the formation mechanisms of these complex three-dimensional nanostructures can facilitate the development of InGaN compounds for gas-sensing applications.
KW - In droplets
KW - InGaN
KW - PA-MBE
KW - ascending diffusion
KW - nanowires
KW - self-organization
KW - wurtzite
KW - zinc blende
UR - https://www.mendeley.com/catalogue/a59ab719-b304-3bf6-9924-e5cec476af2c/
U2 - 10.1021/acsanm.4c02561
DO - 10.1021/acsanm.4c02561
M3 - Article
VL - 7
SP - 17460
EP - 17468
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
SN - 2574-0970
IS - 15
ER -
ID: 122727622