Features of the MBE growth of nanowires with quantum dots on the silicon surface

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Features of the MBE growth of nanowires with quantum dots on the silicon surface. / Reznik, R. R.; Kotlyar, K. P.; Khrebtov, A. I.; Cirlin, G. E.

In: Journal of Physics: Conference Series, Vol. 2086, No. 1, 012032, 06.12.2021.

Research output: Contribution to journal › Conference article › peer-review

BibTeX

@article{6a9ea1385b2747b9bea163addc144b53,

title = "Features of the MBE growth of nanowires with quantum dots on the silicon surface",

abstract = "The development of a new semiconductor element base is necessary to create a new generation of applications. At present time, the synthesis of high-quality hybrid nanostructures based on III-V quantum dots in the body of nanowires of a wide range of material systems is an urgent and important task. In work hybrid III-V nanostructures based on QDs in the body of NWs in GaP/GaAs and AlGaP/InGaP material systems were synthesized in on silicon substrates and their physical properties were investigated.",

author = "Reznik, {R. R.} and Kotlyar, {K. P.} and Khrebtov, {A. I.} and Cirlin, {G. E.}",

note = "Publisher Copyright: {\textcopyright} 2021 Institute of Physics Publishing. All rights reserved.; 8th International School and Conference {"}Saint Petersburg OPEN 2021{"} on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021 ; Conference date: 25-05-2021 Through 28-05-2021",

year = "2021",

month = dec,

day = "6",

doi = "10.1088/1742-6596/2086/1/012032",

language = "English",

volume = "2086",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

RIS

TY - JOUR

T1 - Features of the MBE growth of nanowires with quantum dots on the silicon surface

AU - Reznik, R. R.

AU - Kotlyar, K. P.

AU - Khrebtov, A. I.

AU - Cirlin, G. E.

PY - 2021/12/6

Y1 - 2021/12/6

N2 - The development of a new semiconductor element base is necessary to create a new generation of applications. At present time, the synthesis of high-quality hybrid nanostructures based on III-V quantum dots in the body of nanowires of a wide range of material systems is an urgent and important task. In work hybrid III-V nanostructures based on QDs in the body of NWs in GaP/GaAs and AlGaP/InGaP material systems were synthesized in on silicon substrates and their physical properties were investigated.

AB - The development of a new semiconductor element base is necessary to create a new generation of applications. At present time, the synthesis of high-quality hybrid nanostructures based on III-V quantum dots in the body of nanowires of a wide range of material systems is an urgent and important task. In work hybrid III-V nanostructures based on QDs in the body of NWs in GaP/GaAs and AlGaP/InGaP material systems were synthesized in on silicon substrates and their physical properties were investigated.

UR - http://www.scopus.com/inward/record.url?scp=85122385243&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/2086/1/012032

DO - 10.1088/1742-6596/2086/1/012032

M3 - Conference article

AN - SCOPUS:85122385243

VL - 2086

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012032

T2 - 8th International School and Conference "Saint Petersburg OPEN 2021" on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021

Y2 - 25 May 2021 through 28 May 2021

ER -

ID: 97043681