Research output: Contribution to journal › Conference article › peer-review
The development of a new semiconductor element base is necessary to create a new generation of applications. At present time, the synthesis of high-quality hybrid nanostructures based on III-V quantum dots in the body of nanowires of a wide range of material systems is an urgent and important task. In work hybrid III-V nanostructures based on QDs in the body of NWs in GaP/GaAs and AlGaP/InGaP material systems were synthesized in on silicon substrates and their physical properties were investigated.
Original language | English |
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Article number | 012032 |
Journal | Journal of Physics: Conference Series |
Volume | 2086 |
Issue number | 1 |
DOIs | |
State | Published - 6 Dec 2021 |
Event | 8th International School and Conference "Saint Petersburg OPEN 2021" on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021 - Saint Petersburg, Russian Federation Duration: 25 May 2021 → 28 May 2021 |
ID: 97043681