Temperature dependence of luminescence of heterostructure GaAs/Al0.4Ga0.6As was investigated to study energy transfer between the quantum wells (QWs). The sample contains three 9.6, 4.8 and 2.4 nm thick QWs separated by 14 nm thick barriers. The experimental data was analyzed based on the model that has been previously used to II-VI heterostructures. Keywords: quantum wells III = V, luminescence, energy transfer.