Effect of wet KOH etching on structural properties of GaN nanowires grown on patterned SiOx/Si substrates

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Effect of wet KOH etching on structural properties of GaN nanowires grown on patterned SiO_x/Si substrates. / Lendyashova, V. V.; Kotlyar, K. P.; Gridchin, V. O.; Reznik, R. R.; Lihachev, A. I.; Soshnikov, I. P.; Cirlin, G. E.

In: Journal of Physics: Conference Series, Vol. 2103, No. 1, 012098, 14.12.2021.

Research output: Contribution to journal › Conference article › peer-review

BibTeX

@article{494149d769fc45a9a0db38fac7a67158,

title = "Effect of wet KOH etching on structural properties of GaN nanowires grown on patterned SiOx/Si substrates",

abstract = "The possibility of the controlled removal of GaN nanowires (NWs) from an SiOx inhibitor layer of patterned SiOx/Si substrates has been demonstrated. It has been found that the wet KOH etching preserves the selectively grown GaN NWs on Si surface, whereas the GaN NWs grown on inhibitor SiOx layer are removing. The effect is described by the difference in polarity between GaN NWs grown on a Si surface and NWs grown on a SiOx inhibitor layer.",

author = "Lendyashova, {V. V.} and Kotlyar, {K. P.} and Gridchin, {V. O.} and Reznik, {R. R.} and Lihachev, {A. I.} and Soshnikov, {I. P.} and Cirlin, {G. E.}",

year = "2021",

month = dec,

day = "14",

doi = "10.1088/1742-6596/2103/1/012098",

language = "English",

volume = "2103",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

url = "http://physica.spb.ru/",

}

RIS

TY - JOUR

T1 - Effect of wet KOH etching on structural properties of GaN nanowires grown on patterned SiOx/Si substrates

AU - Lendyashova, V. V.

AU - Kotlyar, K. P.

AU - Gridchin, V. O.

AU - Reznik, R. R.

AU - Lihachev, A. I.

AU - Soshnikov, I. P.

AU - Cirlin, G. E.

PY - 2021/12/14

Y1 - 2021/12/14

N2 - The possibility of the controlled removal of GaN nanowires (NWs) from an SiOx inhibitor layer of patterned SiOx/Si substrates has been demonstrated. It has been found that the wet KOH etching preserves the selectively grown GaN NWs on Si surface, whereas the GaN NWs grown on inhibitor SiOx layer are removing. The effect is described by the difference in polarity between GaN NWs grown on a Si surface and NWs grown on a SiOx inhibitor layer.

AB - The possibility of the controlled removal of GaN nanowires (NWs) from an SiOx inhibitor layer of patterned SiOx/Si substrates has been demonstrated. It has been found that the wet KOH etching preserves the selectively grown GaN NWs on Si surface, whereas the GaN NWs grown on inhibitor SiOx layer are removing. The effect is described by the difference in polarity between GaN NWs grown on a Si surface and NWs grown on a SiOx inhibitor layer.

UR - http://www.scopus.com/inward/record.url?scp=85123488859&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/2103/1/012098

DO - 10.1088/1742-6596/2103/1/012098

M3 - Conference article

AN - SCOPUS:85123488859

VL - 2103

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012098

T2 - International Conference PhysicA.SPb/2021

Y2 - 18 October 2021 through 22 October 2021

ER -

ID: 96851064