The ground and excited energy states of excitons in single square GaAs-based quantum wells are found by the numerical solution of the three-dimensional Schrödinger equation. This equation is obtained within the envelope-function formalism from the exciton energy operator using the spherical approximation of the Luttinger Hamiltonian. Precise results for the exciton states are achieved by the finite-difference method. The radiative decay rates of the calculated states are also determined.

Original languageEnglish
Pages (from-to)551-553
Number of pages3
JournalSemiconductors
Volume52
Issue number5
DOIs
StatePublished - 1 May 2018

    Research areas

  • SEMICONDUCTORS

    Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

ID: 32253328