Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
The ground and excited energy states of excitons in single square GaAs-based quantum wells are found by the numerical solution of the three-dimensional Schrödinger equation. This equation is obtained within the envelope-function formalism from the exciton energy operator using the spherical approximation of the Luttinger Hamiltonian. Precise results for the exciton states are achieved by the finite-difference method. The radiative decay rates of the calculated states are also determined.
Язык оригинала | английский |
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Страницы (с-по) | 551-553 |
Число страниц | 3 |
Журнал | Semiconductors |
Том | 52 |
Номер выпуска | 5 |
DOI | |
Состояние | Опубликовано - 1 мая 2018 |
ID: 32253328