Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
The ground and excited energy states of excitons in single square GaAs-based quantum wells are found by the numerical solution of the three-dimensional Schrödinger equation. This equation is obtained within the envelope-function formalism from the exciton energy operator using the spherical approximation of the Luttinger Hamiltonian. Precise results for the exciton states are achieved by the finite-difference method. The radiative decay rates of the calculated states are also determined.
| Язык оригинала | английский |
|---|---|
| Страницы (с-по) | 551-553 |
| Число страниц | 3 |
| Журнал | Semiconductors |
| Том | 52 |
| Номер выпуска | 5 |
| DOI | |
| Состояние | Опубликовано - 1 мая 2018 |
ID: 32253328