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Calculation of Energy States of Excitons in Square Quantum Wells. / Belov, P. A.

In: Semiconductors, Vol. 52, No. 5, 01.05.2018, p. 551-553.

Research output: Contribution to journal › Article › peer-review

Harvard

Belov, PA 2018, 'Calculation of Energy States of Excitons in Square Quantum Wells', Semiconductors, vol. 52, no. 5, pp. 551-553. https://doi.org/10.1134/S1063782618050032

APA

Belov, P. A. (2018). Calculation of Energy States of Excitons in Square Quantum Wells. Semiconductors, 52(5), 551-553. https://doi.org/10.1134/S1063782618050032

Vancouver

Belov PA. Calculation of Energy States of Excitons in Square Quantum Wells. Semiconductors. 2018 May 1;52(5):551-553. https://doi.org/10.1134/S1063782618050032

Author

Belov, P. A. / Calculation of Energy States of Excitons in Square Quantum Wells. In: Semiconductors. 2018 ; Vol. 52, No. 5. pp. 551-553.

BibTeX

@article{e24fb8659d4b43f0823ab31d873b6ac5,
title = "Calculation of Energy States of Excitons in Square Quantum Wells",
abstract = "The ground and excited energy states of excitons in single square GaAs-based quantum wells are found by the numerical solution of the three-dimensional Schr{\"o}dinger equation. This equation is obtained within the envelope-function formalism from the exciton energy operator using the spherical approximation of the Luttinger Hamiltonian. Precise results for the exciton states are achieved by the finite-difference method. The radiative decay rates of the calculated states are also determined.",
keywords = "SEMICONDUCTORS",
author = "Belov, {P. A.}",
year = "2018",
month = may,
day = "1",
doi = "10.1134/S1063782618050032",
language = "English",
volume = "52",
pages = "551--553",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "5",

}

RIS

TY - JOUR

T1 - Calculation of Energy States of Excitons in Square Quantum Wells

AU - Belov, P. A.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - The ground and excited energy states of excitons in single square GaAs-based quantum wells are found by the numerical solution of the three-dimensional Schrödinger equation. This equation is obtained within the envelope-function formalism from the exciton energy operator using the spherical approximation of the Luttinger Hamiltonian. Precise results for the exciton states are achieved by the finite-difference method. The radiative decay rates of the calculated states are also determined.

AB - The ground and excited energy states of excitons in single square GaAs-based quantum wells are found by the numerical solution of the three-dimensional Schrödinger equation. This equation is obtained within the envelope-function formalism from the exciton energy operator using the spherical approximation of the Luttinger Hamiltonian. Precise results for the exciton states are achieved by the finite-difference method. The radiative decay rates of the calculated states are also determined.

KW - SEMICONDUCTORS

UR - http://www.scopus.com/inward/record.url?scp=85045753694&partnerID=8YFLogxK

UR - http://www.mendeley.com/research/calculation-energy-states-excitons-square-quantum-wells

U2 - 10.1134/S1063782618050032

DO - 10.1134/S1063782618050032

M3 - Article

AN - SCOPUS:85045753694

VL - 52

SP - 551

EP - 553

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -

ID: 32253328