Standard

1.5 μ-m emission from a silicon MOS-LED based on a dislocation network. / Kittler, M.; Arguirov, T.; Vyvenko, O. F.; Seifert, W.; Mchedlidze, T.; Jia, G.; Wilhelm, T.

2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154347 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Harvard

Kittler, M, Arguirov, T, Vyvenko, OF, Seifert, W, Mchedlidze, T, Jia, G & Wilhelm, T 2006, 1.5 μ-m emission from a silicon MOS-LED based on a dislocation network. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154347, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 10/12/06. https://doi.org/10.1109/IEDM.2006.346912

APA

Kittler, M., Arguirov, T., Vyvenko, O. F., Seifert, W., Mchedlidze, T., Jia, G., & Wilhelm, T. (2006). 1.5 μ-m emission from a silicon MOS-LED based on a dislocation network. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154347] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346912

Vancouver

Kittler M, Arguirov T, Vyvenko OF, Seifert W, Mchedlidze T, Jia G et al. 1.5 μ-m emission from a silicon MOS-LED based on a dislocation network. In 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154347. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346912

Author

Kittler, M. ; Arguirov, T. ; Vyvenko, O. F. ; Seifert, W. ; Mchedlidze, T. ; Jia, G. ; Wilhelm, T. / 1.5 μ-m emission from a silicon MOS-LED based on a dislocation network. 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. (Technical Digest - International Electron Devices Meeting, IEDM).

BibTeX

@inproceedings{d9251bbc7fb942f59dc70ffc59637e59,
title = "1.5 μ-m emission from a silicon MOS-LED based on a dislocation network",
abstract = "A novel Si MOS-LED is demonstrated, which is fully compatible with Si technology. It is based on a dislocation network fabricated by wafer direct bonding. Light emission at 1.5 μm was observed when the network was near the Si/SiO2 interface close to/inside the accumulation layer induced by the gate voltage.",
author = "M. Kittler and T. Arguirov and Vyvenko, {O. F.} and W. Seifert and T. Mchedlidze and G. Jia and T. Wilhelm",
year = "2006",
doi = "10.1109/IEDM.2006.346912",
language = "English",
isbn = "1424404398",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",
note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",

}

RIS

TY - GEN

T1 - 1.5 μ-m emission from a silicon MOS-LED based on a dislocation network

AU - Kittler, M.

AU - Arguirov, T.

AU - Vyvenko, O. F.

AU - Seifert, W.

AU - Mchedlidze, T.

AU - Jia, G.

AU - Wilhelm, T.

PY - 2006

Y1 - 2006

N2 - A novel Si MOS-LED is demonstrated, which is fully compatible with Si technology. It is based on a dislocation network fabricated by wafer direct bonding. Light emission at 1.5 μm was observed when the network was near the Si/SiO2 interface close to/inside the accumulation layer induced by the gate voltage.

AB - A novel Si MOS-LED is demonstrated, which is fully compatible with Si technology. It is based on a dislocation network fabricated by wafer direct bonding. Light emission at 1.5 μm was observed when the network was near the Si/SiO2 interface close to/inside the accumulation layer induced by the gate voltage.

UR - http://www.scopus.com/inward/record.url?scp=46049103195&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2006.346912

DO - 10.1109/IEDM.2006.346912

M3 - Conference contribution

AN - SCOPUS:46049103195

SN - 1424404398

SN - 9781424404391

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2006 International Electron Devices Meeting Technical Digest, IEDM

T2 - 2006 International Electron Devices Meeting, IEDM

Y2 - 10 December 2006 through 13 December 2006

ER -

ID: 87673986