The paper compares the characteristics of silicon oxide layers obtained by various technological methods. It is shown that the catalytic method of obtaining silicon oxide layers by molecular layering has a number of advantages. The main ones are low growth temperature, high-quality interface with silicon substrate and high growth rate of films. Studies by cathodoluminescence allowed to evaluate the structural quality of silicon oxide layers obtained by molecular layering, and confirmed the idea of its possibilities for obtaining high-quality films of silicon oxide for wide practical application. Физика