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  1. 2003

  2. New technology for the control of narrow-gap semiconductors

    Antoniou, I., Bozhevolnov, V., Melnikov, Y. & Yafyasov, A., 1 Jul 2003, In: Chaos, Solitons and Fractals. 17, 2-3, p. 219-223 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. The electrophysical properties of the surface layer of the (TlBiSe2)1-x -(TlBiS2)x mixed crystals

    Anagnostopoulos, A., Bogevolnov, V., Ivankiv, I., Shevchenko, O., Perepelkin, A. & Yafyasov, A., 1 Jul 2003, In: Chaos, Solitons and Fractals. 17, 2-3, p. 225-229 5 p.

    Research output: Contribution to journal › Article › peer-review

  4. Rashba effect in inversion and accumulation InAs layers

    Radantsev, V. F., Ivankiv, I. M. & Yafyasov, A. M., 1 Feb 2003, In: Semiconductors. 37, 2, p. 200-206 7 p.

    Research output: Contribution to journal › Article › peer-review

  5. Resonance quantum switch: Search of working parameters

    Bagraev, N. T., Pavlov, B. S. & Yafyasov, A. M., 1 Jan 2003, SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., p. 275-278 4 p. 1233690. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; vol. 2003-January).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  6. Resonance quantum with: search of the working parameters.

    Яфясов, А. А. М., 2003.

    Research output: Contribution to conference › Abstract › peer-review

  7. Физика поверхности полупроводниковых электродов.

    Коноров, П. П. & Яфясов, А. М., 2003, Издательский Центр «Академия».

    Research output: Book/Report/Anthology › Book › Research › peer-review

  8. 2002

  9. Rashba splitting in MIS structures HgCdTe

    Radantsev, V. F. & Yafyasov, A. M., 1 Sep 2002, In: Journal of Experimental and Theoretical Physics. 95, 3, p. 491-501 11 p.

    Research output: Contribution to journal › Article › peer-review

  10. The electrophysical properties of the surface layer of the semiconductor TlBiSe2

    Anagnostopoulos, A., Bogevolnov, V. B., Ivankiv, I. M., Shevchenko, O. Y., Perepelkin, A. D. & Yafyasov, A. M., 29 Aug 2002, In: Physica Status Solidi (B) Basic Research. 231, 2, p. 451-456 6 p.

    Research output: Contribution to journal › Article › peer-review

  11. Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte

    Shevchenko, O. Y., Radantsev, V. F., Yafyasov, A. M., Bozhevol’nov, V. B., Ivankiv, I. M. & Perepelkin, A. D., 1 Apr 2002, In: Semiconductors. 36, 4, p. 390-393 4 p.

    Research output: Contribution to journal › Article › peer-review

  12. Field effect in a system consisting of electrolyte and (TlBiSe2)1-x-(TlBiS2)x solid solution

    Shevchenko, O. Y., Yafyasov, A. M., Bozhevol'nov, V. B., Ivankiv, I. M. & Perepelkin, A. D., 1 Apr 2002, In: Semiconductors. 36, 4, p. 420-423 4 p.

    Research output: Contribution to journal › Article › peer-review

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