Research output: Contribution to journal › Article › peer-review
A report on the development of technology for the control of narrow-gap semiconductors was presented. The work involved theoretical and experimental study for generation of nanoelectronic devices able to operate at 77 K and room temperature. A prototype for monitoring of electrophysical surface properties of semiconductors was constructed and evaluated.
| Original language | English |
|---|---|
| Pages (from-to) | 219-223 |
| Number of pages | 5 |
| Journal | Chaos, Solitons and Fractals |
| Volume | 17 |
| Issue number | 2-3 |
| DOIs | |
| State | Published - 1 Jul 2003 |
ID: 42240249