1 - 5 out of 5Page size: 10
  1. 2019

  2. Si(Li) detector with ultra-thin entrance window on the diffusive lithium side

    Bazlov, N. V., Derbin, A. V., Drachnev, I. S., Gicharevich, G. E., Kotina, I. M., Konkov, O. I., Pilipenko, N. V., Chmel, E. A., Abolmasov, S. N., Terukov, E. I. & Unzhakov, E. V., 11 Dec 2019, In: Journal of Physics: Conference Series. 1400, 5, 055056.

    Research output: Contribution to journal › Conference article › peer-review

  3. 2018

  4. Beta-spectrometer with Si-detectors for the study of 144Ce–144Pr decays

    Alexeev, I. E., Bakhlanov, S. V., Bazlov, N. V., Chmel, E. A., Derbin, A. V., Drachnev, I. S., Kotina, I. M., Muratova, V. N., Pilipenko, N. V., Semyonov, D. A., Unzhakov, E. V. & Yeremin, V. K., 11 May 2018, In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 890, p. 64-67 4 p.

    Research output: Contribution to journal › Article › peer-review

  5. A Beta Spectrometer Based on Silicon Detectors

    Bazlov, N. V., Bakhlanov, S. V., Derbin, A. V., Drachnev, I. S., Eremin, V. K., Kotina, I. M., Muratova, V. N., Pilipenko, N. V., Semenov, D. A., Unzhakov, E. V. & Chmel, E. A., 1 May 2018, In: Instruments and Experimental Techniques. 61, 3, p. 323-327 5 p.

    Research output: Contribution to journal › Article › peer-review

  6. 2017

  7. A Silicon Detector Based Beta-spectrometer

    Alekseev, I. E., Bakhlanov, S. V., Bazlov, N. V., Chmel, E. A., Derbin, A. V., Drachnev, I. S., Kotina, I. M., Muratova, V. N., Pilipenko, N. V., Semenov, D. A., Unzhakov, E. V. & Yeremin, V. K., 20 Dec 2017, In: Journal of Physics: Conference Series. 934, 1, 012056.

    Research output: Contribution to journal › Conference article › peer-review

  8. 2016

  9. Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering

    Bazlov, N., Pilipenko, N., Vyvenko, O., Kotina, I., Petrov, Y., Mikhailovskii, V., Ubyivovk, E. & Zharinov, V., 2016, Structural and Electrical Properties of AlN Layers Grown on Silicon by Reactive RF Magnetron Sputtering. American Institute of Physics, 9 p.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

ID: 153883