1 - 10 out of 15Page size: 10
  1. 2024

  2. Defect Structure and Luminescence of κ-Ga2O3 Micro-Monocrystals

    Vyvenko, O. F., Shapenkov, S. V., Ubyivovk, E. V., Bondarenko, A. S., Varygin, G. V., Pechnikov, A. I. & Nikolaev, V. I., 24 Oct 2024, In: Physica Status Solidi (B) Basic Research.

    Research output: Contribution to journal › Article › peer-review

  3. СТРУКТУРА ДОМЕННЫХ И АНТИФАЗНЫХ ГРАНИЦ В κ-ФАЗЕ ОКСИДА ГАЛЛИЯ

    Вывенко, О. Ф., Бондаренко, А. С., Убыйвовк, Е. В., Шапенков, С. В., Печников, А., Николаев, В. И. & Степанов, С. И., 15 Feb 2024, In: КРИСТАЛЛОГРАФИЯ. 69, 1, p. 34-39 6 p.

    Research output: Contribution to journal › Article › peer-review

  4. The Structure of Domain and Antiphase Boundaries in κ-Phase of Gallium Oxide

    Вывенко, О. Ф., Бондаренко, А. С., Убыйвовк, Е. В., Шапенков, С. В., Pechnikov, A., Nikolaev, V. & Степанов, С. И., 1 Feb 2024, In: Crystallography Reports. 69, 1, p. 23–28 6 p.

    Research output: Contribution to journal › Article › peer-review

  5. 2023

  6. Twin domain and antiphase boundaries in microcrystals of Κ-phase Ga2O3

    Вывенко, О. Ф., Шапенков, С. В., Убыйвовк, Е. В., Бондаренко, А. С., Печников, А., Николаев, В. И. & Степанов, С., 1 Dec 2023, In: Materialia. 32, 101942.

    Research output: Contribution to journal › Article › peer-review

  7. Структура и рекомбинационные свойства двойниковых границ в к-фазе оксида галлия

    Вывенко, О. Ф., Бондаренко, А. С., Убыйвовк, Е. В., Шапенков, С. В., Печников, А., Николаев, В. И. & Степанов, С., Dec 2023, In: ФИЗИКА ТВЕРДОГО ТЕЛА. 65, 12, p. 2194 4 p.

    Research output: Contribution to journal › Conference article › peer-review

  8. 2022

  9. Fine core structure and spectral luminescence features of freshly introduced dislocations in Fe-doped GaN

    Shapenkov, S., Vyvenko, O., Ubyivovk, E. & Mikhailovskii, V., 28 Mar 2022, In: Journal of Applied Physics. 131, 12, 12 p., 125707.

    Research output: Contribution to journal › Article › peer-review

  10. 2021

  11. Polymorphism and Faceting in Ga2O3 Layers Grown by HVPE at Various Gallium-to-Oxygen Ratios

    Shapenkov, S., Vyvenko, O., Nikolaev, V., Stepanov, S., Pechnikov, A., Scheglov, M. & Varygin, G., 5 Nov 2021, In: Physica Status Solidi (B) Basic Research. 8 p., 2100331.

    Research output: Contribution to journal › Article › peer-review

  12. Characteristic emission from quantum dot-like intersection nodes of dislocations in GaN

    Shapenkov, S. V., Vyvenko, O. F., Schmidt, G., Bertram, F., Metzner, S., Veit, P. & Christen, J., 15 Apr 2021, In: Journal of Physics: Conference Series. 1851, 1, 012013.

    Research output: Contribution to journal › Conference article › peer-review

  13. 2020

  14. Halide Vapor Phase Epitaxy α- and ε-Ga2O3 Epitaxial Films Grown on Patterned Sapphire Substrates

    Shapenkov, S., Vyvenko, O., Ubyivovk, E., Medvedev, O., Varygin, G., Chikiryaka, A., Pechnikov, A., Scheglov, M., Stepanov, S. & Nikolaev, V., Jul 2020, In: Physica Status Solidi (A) Applications and Materials Science. 217, 14, 6 p., 1900892.

    Research output: Contribution to journal › Article › peer-review

  15. HVPE Growth and Characterization of ϵ-Ga2O3 Films on Various Substrates

    Nikolaev, V. I., Stepanov, S. I., Pechnikov, A. I., Shapenkov, S. V., Scheglov, M. P., Chikiryaka, A. V. & Vyvenko, O. F., 1 May 2020, In: ECS Journal of Solid State Science and Technology. 9, 4, 6 p., 045014.

    Research output: Contribution to journal › Article › peer-review

Previous 1 2 Next

ID: 214795