1. 2002
  2. The energy position of electrically active centers in the oxide layer of SIMOX structures

    Askinazi, A. Y., Baraban, A. P., Dmitriev, V. A. & Miloglyadova, L. V., 1 Dec 2002, In: Technical Physics Letters. 28, 12, p. 983-985 3 p.

    Research output: Contribution to journal › Article › peer-review

  3. Rashba splitting in MIS structures HgCdTe

    Radantsev, V. F. & Yafyasov, A. M., 1 Sep 2002, In: Journal of Experimental and Theoretical Physics. 95, 3, p. 491-501 11 p.

    Research output: Contribution to journal › Article › peer-review

  4. The electrophysical properties of the surface layer of the semiconductor TlBiSe2

    Anagnostopoulos, A., Bogevolnov, V. B., Ivankiv, I. M., Shevchenko, O. Y., Perepelkin, A. D. & Yafyasov, A. M., 29 Aug 2002, In: Physica Status Solidi (B) Basic Research. 231, 2, p. 451-456 6 p.

    Research output: Contribution to journal › Article › peer-review

  5. Effect of sorbed hydrogen on the conductivity of nanoporous carbon

    Voit, A. P., Evard, E. A. & Gabis, I. E., 1 Jul 2002, In: Materials Science. 38, 4, p. 570-575 6 p.

    Research output: Contribution to journal › Article › peer-review

  6. Formation of defects in the oxide layer of ion-irradiated Si/SiO2 structures

    Baraban, A. P. & Miloglyadova, L. V., 1 May 2002, In: Technical Physics. 47, 5, p. 569-573 5 p.

    Research output: Contribution to journal › Article › peer-review

  7. Role of masking oxide on the silicon surface on defect formation in SIMOX structures

    Askinazi, A. Y., Baraban, A. P. & Miloglyadova, L. V., 1 May 2002, In: Technical Physics. 47, 5, p. 574-577 4 p.

    Research output: Contribution to journal › Article › peer-review

  8. Interface formation between thin Cu-phthalocyanine films and crystalline and oxidized silicon surfaces

    Komolov, A. S. & Moller, P. J., 30 Apr 2002, In: Synthetic Metals. 128, 2, p. 205-210 6 p., PII S0379-6779(02)00017-6.

    Research output: Contribution to journal › Article › peer-review

  9. Defect recognition and impurity detection techniques in crystalline silicon for solar cells

    Istratov, A. A., Hieslmair, H., Vyvenko, O. F., Weber, E. R. & Schindler, R., 1 Apr 2002, In: Solar Energy Materials and Solar Cells. 72, 1-4, p. 441-451 11 p.

    Research output: Contribution to journal › Article › peer-review

  10. Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte

    Shevchenko, O. Y., Radantsev, V. F., Yafyasov, A. M., Bozhevol’nov, V. B., Ivankiv, I. M. & Perepelkin, A. D., 1 Apr 2002, In: Semiconductors. 36, 4, p. 390-393 4 p.

    Research output: Contribution to journal › Article › peer-review

  11. Field effect in a system consisting of electrolyte and (TlBiSe2)1-x-(TlBiS2)x solid solution

    Shevchenko, O. Y., Yafyasov, A. M., Bozhevol'nov, V. B., Ivankiv, I. M. & Perepelkin, A. D., 1 Apr 2002, In: Semiconductors. 36, 4, p. 420-423 4 p.

    Research output: Contribution to journal › Article › peer-review

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