Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb2S3-based Photovoltaics. / Büttner, Pascal; Scheler, Florian; Pointer, Craig; Döhler, Dirk; Yokosawa, Tadahiro; Spiecker, Erdmann; Boix, Pablo P.; Young, Elizabeth R.; Mínguez-Bacho, Ignacio; Bachmann, Julien.
в: ACS Applied Materials and Interfaces, Том 13, № 10, 05.03.2021, стр. 11861-11868.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb2S3-based Photovoltaics
AU - Büttner, Pascal
AU - Scheler, Florian
AU - Pointer, Craig
AU - Döhler, Dirk
AU - Yokosawa, Tadahiro
AU - Spiecker, Erdmann
AU - Boix, Pablo P.
AU - Young, Elizabeth R.
AU - Mínguez-Bacho, Ignacio
AU - Bachmann, Julien
N1 - Publisher Copyright: © 2021 The Authors. Published by American Chemical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/3/5
Y1 - 2021/3/5
N2 - Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over the ZnS interlayer thickness on the ångström scale (0-1.5 nm) and to deposit highly pure Sb2S3. Our systematic study of the photovoltaic and optoelectronic properties of these devices by impedance spectroscopy and transient absorption concludes that the optimum ZnS interlayer thickness of 1.0 nm achieves the best balance between the beneficial effect of an increased recombination resistance at the interface and the deleterious barrier behavior of the wide-bandgap semiconductor ZnS. This optimization allows us to reach an overall power conversion efficiency of 5.09% in planar configuration.
AB - Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over the ZnS interlayer thickness on the ångström scale (0-1.5 nm) and to deposit highly pure Sb2S3. Our systematic study of the photovoltaic and optoelectronic properties of these devices by impedance spectroscopy and transient absorption concludes that the optimum ZnS interlayer thickness of 1.0 nm achieves the best balance between the beneficial effect of an increased recombination resistance at the interface and the deleterious barrier behavior of the wide-bandgap semiconductor ZnS. This optimization allows us to reach an overall power conversion efficiency of 5.09% in planar configuration.
KW - anti-recombination layer
KW - atomic layer deposition
KW - chalcogenides
KW - extremely thin absorber
KW - interfacial layer
KW - passivation layer
KW - thin film solar cells
KW - tunnel barrier
UR - http://www.scopus.com/inward/record.url?scp=85103228789&partnerID=8YFLogxK
U2 - 10.1021/acsami.0c21365
DO - 10.1021/acsami.0c21365
M3 - Article
C2 - 33667064
AN - SCOPUS:85103228789
VL - 13
SP - 11861
EP - 11868
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 10
ER -
ID: 77893701