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ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb2S3-based Photovoltaics. / Büttner, Pascal; Scheler, Florian; Pointer, Craig; Döhler, Dirk; Yokosawa, Tadahiro; Spiecker, Erdmann; Boix, Pablo P.; Young, Elizabeth R.; Mínguez-Bacho, Ignacio; Bachmann, Julien.

In: ACS Applied Materials and Interfaces, Vol. 13, No. 10, 05.03.2021, p. 11861-11868.

Research output: Contribution to journal › Article › peer-review

Harvard

Büttner, P, Scheler, F, Pointer, C, Döhler, D, Yokosawa, T, Spiecker, E, Boix, PP, Young, ER, Mínguez-Bacho, I & Bachmann, J 2021, 'ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb2S3-based Photovoltaics', ACS Applied Materials and Interfaces, vol. 13, no. 10, pp. 11861-11868. https://doi.org/10.1021/acsami.0c21365

APA

Büttner, P., Scheler, F., Pointer, C., Döhler, D., Yokosawa, T., Spiecker, E., Boix, P. P., Young, E. R., Mínguez-Bacho, I., & Bachmann, J. (2021). ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb2S3-based Photovoltaics. ACS Applied Materials and Interfaces, 13(10), 11861-11868. https://doi.org/10.1021/acsami.0c21365

Vancouver

Büttner P, Scheler F, Pointer C, Döhler D, Yokosawa T, Spiecker E et al. ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb2S3-based Photovoltaics. ACS Applied Materials and Interfaces. 2021 Mar 5;13(10):11861-11868. https://doi.org/10.1021/acsami.0c21365

Author

Büttner, Pascal ; Scheler, Florian ; Pointer, Craig ; Döhler, Dirk ; Yokosawa, Tadahiro ; Spiecker, Erdmann ; Boix, Pablo P. ; Young, Elizabeth R. ; Mínguez-Bacho, Ignacio ; Bachmann, Julien. / ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb2S3-based Photovoltaics. In: ACS Applied Materials and Interfaces. 2021 ; Vol. 13, No. 10. pp. 11861-11868.

BibTeX

@article{1d84813e78564fa38dc315229ad95600,
title = "ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb2S3-based Photovoltaics",
abstract = "Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over the ZnS interlayer thickness on the {\aa}ngstr{\"o}m scale (0-1.5 nm) and to deposit highly pure Sb2S3. Our systematic study of the photovoltaic and optoelectronic properties of these devices by impedance spectroscopy and transient absorption concludes that the optimum ZnS interlayer thickness of 1.0 nm achieves the best balance between the beneficial effect of an increased recombination resistance at the interface and the deleterious barrier behavior of the wide-bandgap semiconductor ZnS. This optimization allows us to reach an overall power conversion efficiency of 5.09% in planar configuration. ",
keywords = "anti-recombination layer, atomic layer deposition, chalcogenides, extremely thin absorber, interfacial layer, passivation layer, thin film solar cells, tunnel barrier",
author = "Pascal B{\"u}ttner and Florian Scheler and Craig Pointer and Dirk D{\"o}hler and Tadahiro Yokosawa and Erdmann Spiecker and Boix, {Pablo P.} and Young, {Elizabeth R.} and Ignacio M{\'i}nguez-Bacho and Julien Bachmann",
note = "Publisher Copyright: {\textcopyright} 2021 The Authors. Published by American Chemical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = mar,
day = "5",
doi = "10.1021/acsami.0c21365",
language = "English",
volume = "13",
pages = "11861--11868",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "10",

}

RIS

TY - JOUR

T1 - ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb2S3-based Photovoltaics

AU - Büttner, Pascal

AU - Scheler, Florian

AU - Pointer, Craig

AU - Döhler, Dirk

AU - Yokosawa, Tadahiro

AU - Spiecker, Erdmann

AU - Boix, Pablo P.

AU - Young, Elizabeth R.

AU - Mínguez-Bacho, Ignacio

AU - Bachmann, Julien

N1 - Publisher Copyright: © 2021 The Authors. Published by American Chemical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/3/5

Y1 - 2021/3/5

N2 - Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over the ZnS interlayer thickness on the ångström scale (0-1.5 nm) and to deposit highly pure Sb2S3. Our systematic study of the photovoltaic and optoelectronic properties of these devices by impedance spectroscopy and transient absorption concludes that the optimum ZnS interlayer thickness of 1.0 nm achieves the best balance between the beneficial effect of an increased recombination resistance at the interface and the deleterious barrier behavior of the wide-bandgap semiconductor ZnS. This optimization allows us to reach an overall power conversion efficiency of 5.09% in planar configuration.

AB - Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over the ZnS interlayer thickness on the ångström scale (0-1.5 nm) and to deposit highly pure Sb2S3. Our systematic study of the photovoltaic and optoelectronic properties of these devices by impedance spectroscopy and transient absorption concludes that the optimum ZnS interlayer thickness of 1.0 nm achieves the best balance between the beneficial effect of an increased recombination resistance at the interface and the deleterious barrier behavior of the wide-bandgap semiconductor ZnS. This optimization allows us to reach an overall power conversion efficiency of 5.09% in planar configuration.

KW - anti-recombination layer

KW - atomic layer deposition

KW - chalcogenides

KW - extremely thin absorber

KW - interfacial layer

KW - passivation layer

KW - thin film solar cells

KW - tunnel barrier

UR - http://www.scopus.com/inward/record.url?scp=85103228789&partnerID=8YFLogxK

U2 - 10.1021/acsami.0c21365

DO - 10.1021/acsami.0c21365

M3 - Article

C2 - 33667064

AN - SCOPUS:85103228789

VL - 13

SP - 11861

EP - 11868

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 10

ER -

ID: 77893701