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X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well. / Blagov, A. E.; Galiev, G. B.; Imamov, R. M.; Klimov, E. A.; Kondratev, O. A.; Pisarevskii, Yu V.; Prosekov, P. A.; Pushkarev, S. S.; Seregin, A. Yu; Koval’chuk, M. V.

в: Crystallography Reports, Том 62, № 3, 01.05.2017, стр. 355-363.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Blagov, AE, Galiev, GB, Imamov, RM, Klimov, EA, Kondratev, OA, Pisarevskii, YV, Prosekov, PA, Pushkarev, SS, Seregin, AY & Koval’chuk, MV 2017, 'X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well', Crystallography Reports, Том. 62, № 3, стр. 355-363. https://doi.org/10.1134/S1063774517030026

APA

Blagov, A. E., Galiev, G. B., Imamov, R. M., Klimov, E. A., Kondratev, O. A., Pisarevskii, Y. V., Prosekov, P. A., Pushkarev, S. S., Seregin, A. Y., & Koval’chuk, M. V. (2017). X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well. Crystallography Reports, 62(3), 355-363. https://doi.org/10.1134/S1063774517030026

Vancouver

Blagov AE, Galiev GB, Imamov RM, Klimov EA, Kondratev OA, Pisarevskii YV и пр. X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well. Crystallography Reports. 2017 Май 1;62(3):355-363. https://doi.org/10.1134/S1063774517030026

Author

Blagov, A. E. ; Galiev, G. B. ; Imamov, R. M. ; Klimov, E. A. ; Kondratev, O. A. ; Pisarevskii, Yu V. ; Prosekov, P. A. ; Pushkarev, S. S. ; Seregin, A. Yu ; Koval’chuk, M. V. / X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well. в: Crystallography Reports. 2017 ; Том 62, № 3. стр. 355-363.

BibTeX

@article{8cf29b9f14bd49a88d8025dee5906512,
title = "X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well",
abstract = "In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.",
author = "Blagov, {A. E.} and Galiev, {G. B.} and Imamov, {R. M.} and Klimov, {E. A.} and Kondratev, {O. A.} and Pisarevskii, {Yu V.} and Prosekov, {P. A.} and Pushkarev, {S. S.} and Seregin, {A. Yu} and Koval{\textquoteright}chuk, {M. V.}",
note = "Publisher Copyright: {\textcopyright} 2017, Pleiades Publishing, Inc.",
year = "2017",
month = may,
day = "1",
doi = "10.1134/S1063774517030026",
language = "English",
volume = "62",
pages = "355--363",
journal = "Crystallography Reports",
issn = "1063-7745",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "3",

}

RIS

TY - JOUR

T1 - X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well

AU - Blagov, A. E.

AU - Galiev, G. B.

AU - Imamov, R. M.

AU - Klimov, E. A.

AU - Kondratev, O. A.

AU - Pisarevskii, Yu V.

AU - Prosekov, P. A.

AU - Pushkarev, S. S.

AU - Seregin, A. Yu

AU - Koval’chuk, M. V.

N1 - Publisher Copyright: © 2017, Pleiades Publishing, Inc.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.

AB - In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.

UR - http://www.scopus.com/inward/record.url?scp=85020423246&partnerID=8YFLogxK

U2 - 10.1134/S1063774517030026

DO - 10.1134/S1063774517030026

M3 - Article

AN - SCOPUS:85020423246

VL - 62

SP - 355

EP - 363

JO - Crystallography Reports

JF - Crystallography Reports

SN - 1063-7745

IS - 3

ER -

ID: 88201917