Standard
X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well. / Blagov, A. E.; Galiev, G. B.; Imamov, R. M.; Klimov, E. A.; Kondratev, O. A.; Pisarevskii, Yu V.; Prosekov, P. A.; Pushkarev, S. S.; Seregin, A. Yu; Koval’chuk, M. V.
In:
Crystallography Reports, Vol. 62, No. 3, 01.05.2017, p. 355-363.
Research output: Contribution to journal › Article › peer-review
Harvard
Blagov, AE, Galiev, GB, Imamov, RM, Klimov, EA, Kondratev, OA, Pisarevskii, YV, Prosekov, PA, Pushkarev, SS, Seregin, AY
& Koval’chuk, MV 2017, '
X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well',
Crystallography Reports, vol. 62, no. 3, pp. 355-363.
https://doi.org/10.1134/S1063774517030026
APA
Blagov, A. E., Galiev, G. B., Imamov, R. M., Klimov, E. A., Kondratev, O. A., Pisarevskii, Y. V., Prosekov, P. A., Pushkarev, S. S., Seregin, A. Y.
, & Koval’chuk, M. V. (2017).
X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well.
Crystallography Reports,
62(3), 355-363.
https://doi.org/10.1134/S1063774517030026
Vancouver
Author
Blagov, A. E. ; Galiev, G. B. ; Imamov, R. M. ; Klimov, E. A. ; Kondratev, O. A. ; Pisarevskii, Yu V. ; Prosekov, P. A. ; Pushkarev, S. S. ; Seregin, A. Yu
; Koval’chuk, M. V. /
X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well. In:
Crystallography Reports. 2017 ; Vol. 62, No. 3. pp. 355-363.
BibTeX
@article{8cf29b9f14bd49a88d8025dee5906512,
title = "X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well",
abstract = "In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.",
author = "Blagov, {A. E.} and Galiev, {G. B.} and Imamov, {R. M.} and Klimov, {E. A.} and Kondratev, {O. A.} and Pisarevskii, {Yu V.} and Prosekov, {P. A.} and Pushkarev, {S. S.} and Seregin, {A. Yu} and Koval{\textquoteright}chuk, {M. V.}",
note = "Publisher Copyright: {\textcopyright} 2017, Pleiades Publishing, Inc.",
year = "2017",
month = may,
day = "1",
doi = "10.1134/S1063774517030026",
language = "English",
volume = "62",
pages = "355--363",
journal = "Crystallography Reports",
issn = "1063-7745",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "3",
}
RIS
TY - JOUR
T1 - X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well
AU - Blagov, A. E.
AU - Galiev, G. B.
AU - Imamov, R. M.
AU - Klimov, E. A.
AU - Kondratev, O. A.
AU - Pisarevskii, Yu V.
AU - Prosekov, P. A.
AU - Pushkarev, S. S.
AU - Seregin, A. Yu
AU - Koval’chuk, M. V.
N1 - Publisher Copyright:
© 2017, Pleiades Publishing, Inc.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.
AB - In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.
UR - http://www.scopus.com/inward/record.url?scp=85020423246&partnerID=8YFLogxK
U2 - 10.1134/S1063774517030026
DO - 10.1134/S1063774517030026
M3 - Article
AN - SCOPUS:85020423246
VL - 62
SP - 355
EP - 363
JO - Crystallography Reports
JF - Crystallography Reports
SN - 1063-7745
IS - 3
ER -