Standard

X-ray absorption at Si K-edge for novel compounds in the ternary system Si-C-N. / Kroll, P.; Greiner, A.; Riedel, R.; Bender, S.; Franke, R.; Hormes, J.; Pavlychev, A. A.

1996. 225-229 Работа представлена на Proceedings of the 1996 MRS Spring Meeting, Boston, MA, USA.

Результаты исследований: Материалы конференций › материалы › Рецензирование

Harvard

Kroll, P, Greiner, A, Riedel, R, Bender, S, Franke, R, Hormes, J & Pavlychev, AA 1996, 'X-ray absorption at Si K-edge for novel compounds in the ternary system Si-C-N', Работа представлена на Proceedings of the 1996 MRS Spring Meeting, Boston, MA, USA, 8/04/96 - 12/04/96 стр. 225-229.

APA

Kroll, P., Greiner, A., Riedel, R., Bender, S., Franke, R., Hormes, J., & Pavlychev, A. A. (1996). X-ray absorption at Si K-edge for novel compounds in the ternary system Si-C-N. 225-229. Работа представлена на Proceedings of the 1996 MRS Spring Meeting, Boston, MA, USA.

Vancouver

Kroll P, Greiner A, Riedel R, Bender S, Franke R, Hormes J и пр.. X-ray absorption at Si K-edge for novel compounds in the ternary system Si-C-N. 1996. Работа представлена на Proceedings of the 1996 MRS Spring Meeting, Boston, MA, USA.

Author

Kroll, P. ; Greiner, A. ; Riedel, R. ; Bender, S. ; Franke, R. ; Hormes, J. ; Pavlychev, A. A. / X-ray absorption at Si K-edge for novel compounds in the ternary system Si-C-N. Работа представлена на Proceedings of the 1996 MRS Spring Meeting, Boston, MA, USA.5 стр.

BibTeX

@conference{9e35c29a651c4fa0b1e487b3127bb5e0,
title = "X-ray absorption at Si K-edge for novel compounds in the ternary system Si-C-N",
abstract = " We present results of Si K-edge XANES-investigations for novel Si-C-N containing solid phases prepared by annealing of Si(NCN) 2 at temperatures between room temperature (RT) and 1600 °C. The chemical equivalence of the NCN-group and oxygen as a ligand of silicon is confirmed. The spectra show the presence of an intermediate crystalline phase and its decomposition. Furthermore the recrystallization of a Si 3 N 4 /SiC composite material and its dependence on temperature can be seen. ",
author = "P. Kroll and A. Greiner and R. Riedel and S. Bender and R. Franke and J. Hormes and Pavlychev, {A. A.}",
year = "1996",
month = dec,
day = "1",
language = "English",
pages = "225--229",
note = "Proceedings of the 1996 MRS Spring Meeting ; Conference date: 08-04-1996 Through 12-04-1996",

}

RIS

TY - CONF

T1 - X-ray absorption at Si K-edge for novel compounds in the ternary system Si-C-N

AU - Kroll, P.

AU - Greiner, A.

AU - Riedel, R.

AU - Bender, S.

AU - Franke, R.

AU - Hormes, J.

AU - Pavlychev, A. A.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - We present results of Si K-edge XANES-investigations for novel Si-C-N containing solid phases prepared by annealing of Si(NCN) 2 at temperatures between room temperature (RT) and 1600 °C. The chemical equivalence of the NCN-group and oxygen as a ligand of silicon is confirmed. The spectra show the presence of an intermediate crystalline phase and its decomposition. Furthermore the recrystallization of a Si 3 N 4 /SiC composite material and its dependence on temperature can be seen.

AB - We present results of Si K-edge XANES-investigations for novel Si-C-N containing solid phases prepared by annealing of Si(NCN) 2 at temperatures between room temperature (RT) and 1600 °C. The chemical equivalence of the NCN-group and oxygen as a ligand of silicon is confirmed. The spectra show the presence of an intermediate crystalline phase and its decomposition. Furthermore the recrystallization of a Si 3 N 4 /SiC composite material and its dependence on temperature can be seen.

UR - http://www.scopus.com/inward/record.url?scp=0030408125&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030408125

SP - 225

EP - 229

T2 - Proceedings of the 1996 MRS Spring Meeting

Y2 - 8 April 1996 through 12 April 1996

ER -

ID: 43210000