Research output: Contribution to conference › Paper › peer-review
X-ray absorption at Si K-edge for novel compounds in the ternary system Si-C-N. / Kroll, P.; Greiner, A.; Riedel, R.; Bender, S.; Franke, R.; Hormes, J.; Pavlychev, A. A.
1996. 225-229 Paper presented at Proceedings of the 1996 MRS Spring Meeting, Boston, MA, USA.Research output: Contribution to conference › Paper › peer-review
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TY - CONF
T1 - X-ray absorption at Si K-edge for novel compounds in the ternary system Si-C-N
AU - Kroll, P.
AU - Greiner, A.
AU - Riedel, R.
AU - Bender, S.
AU - Franke, R.
AU - Hormes, J.
AU - Pavlychev, A. A.
PY - 1996/12/1
Y1 - 1996/12/1
N2 - We present results of Si K-edge XANES-investigations for novel Si-C-N containing solid phases prepared by annealing of Si(NCN) 2 at temperatures between room temperature (RT) and 1600 °C. The chemical equivalence of the NCN-group and oxygen as a ligand of silicon is confirmed. The spectra show the presence of an intermediate crystalline phase and its decomposition. Furthermore the recrystallization of a Si 3 N 4 /SiC composite material and its dependence on temperature can be seen.
AB - We present results of Si K-edge XANES-investigations for novel Si-C-N containing solid phases prepared by annealing of Si(NCN) 2 at temperatures between room temperature (RT) and 1600 °C. The chemical equivalence of the NCN-group and oxygen as a ligand of silicon is confirmed. The spectra show the presence of an intermediate crystalline phase and its decomposition. Furthermore the recrystallization of a Si 3 N 4 /SiC composite material and its dependence on temperature can be seen.
UR - http://www.scopus.com/inward/record.url?scp=0030408125&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:0030408125
SP - 225
EP - 229
T2 - Proceedings of the 1996 MRS Spring Meeting
Y2 - 8 April 1996 through 12 April 1996
ER -
ID: 43210000