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UV detectors based on In2O3Ga2O3 composite films. / Almaev, Aleksei; Almaev, Dmitry; Nikolaev, Vladimir; Scheglov, Mikhail; Chikiryaka, Andrei; Pechnikov, Alexei; Kosmachev, Pavel; Korusenko, Petr; Koroleva, Aleksandra; Zhizhin, Evgeniy.

в: IEEE Sensors Journal, 01.01.2024, стр. 1-1.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Almaev, A, Almaev, D, Nikolaev, V, Scheglov, M, Chikiryaka, A, Pechnikov, A, Kosmachev, P, Korusenko, P, Koroleva, A & Zhizhin, E 2024, 'UV detectors based on In2O3Ga2O3 composite films', IEEE Sensors Journal, стр. 1-1. https://doi.org/10.1109/JSEN.2024.3427867

APA

Almaev, A., Almaev, D., Nikolaev, V., Scheglov, M., Chikiryaka, A., Pechnikov, A., Kosmachev, P., Korusenko, P., Koroleva, A., & Zhizhin, E. (2024). UV detectors based on In2O3Ga2O3 composite films. IEEE Sensors Journal, 1-1. https://doi.org/10.1109/JSEN.2024.3427867

Vancouver

Almaev A, Almaev D, Nikolaev V, Scheglov M, Chikiryaka A, Pechnikov A и пр. UV detectors based on In2O3Ga2O3 composite films. IEEE Sensors Journal. 2024 Янв. 1;1-1. https://doi.org/10.1109/JSEN.2024.3427867

Author

Almaev, Aleksei ; Almaev, Dmitry ; Nikolaev, Vladimir ; Scheglov, Mikhail ; Chikiryaka, Andrei ; Pechnikov, Alexei ; Kosmachev, Pavel ; Korusenko, Petr ; Koroleva, Aleksandra ; Zhizhin, Evgeniy. / UV detectors based on In2O3Ga2O3 composite films. в: IEEE Sensors Journal. 2024 ; стр. 1-1.

BibTeX

@article{466f4ec381b747ed9a88831be5109ad8,
title = "UV detectors based on In2O3Ga2O3 composite films",
abstract = "The photoelectric and structural properties of In2O3-Ga2O3 composite films deposited by halide vapor phase epitaxy on sapphire substrates were investigated. The deposited films were a composite of cubic c-In2O3 and δ-Ga2O3 phases with a low content (InxGa1-x)2O2.4 solid solution deficient in oxygen phase at the surface region. The spectral dependencies of the responsivity, external quantum efficiency and detectivity were studied in the wavelength interval from 205 nm to 360 nm. The In2O3-Ga2O3 composite films demonstrated high photosensitivity, low base resistance and wide spectral interval of sensitivity including UV-C, UV-B and UV-A wavelength ranges. The maximum external quantum efficiency and responsivity of the In2O3-Ga2O3 composite films achieved under radiation exposure at a wavelength of 214 nm and electric field strength of 1 kV/cm were 3.8×105 % and 660 A/W, respectively. A mechanism for the high photosensitivity of the In2O3-Ga2O3 composite films based on the bipolar generation of charge carriers mainly in the segregated regions of the δ-Ga2O3 phase is proposed.",
keywords = "Chemicals, Detectors, Films, Indium oxide, Sea measurements, Solids, Substrates, Three-dimensional displays, composite films, external quantum efficiency, gallium oxide, halide vapor phase epitaxy, ultraviolet detector",
author = "Aleksei Almaev and Dmitry Almaev and Vladimir Nikolaev and Mikhail Scheglov and Andrei Chikiryaka and Alexei Pechnikov and Pavel Kosmachev and Petr Korusenko and Aleksandra Koroleva and Evgeniy Zhizhin",
year = "2024",
month = jan,
day = "1",
doi = "10.1109/JSEN.2024.3427867",
language = "English",
pages = "1--1",
journal = "IEEE Sensors Journal",
issn = "1530-437X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

RIS

TY - JOUR

T1 - UV detectors based on In2O3Ga2O3 composite films

AU - Almaev, Aleksei

AU - Almaev, Dmitry

AU - Nikolaev, Vladimir

AU - Scheglov, Mikhail

AU - Chikiryaka, Andrei

AU - Pechnikov, Alexei

AU - Kosmachev, Pavel

AU - Korusenko, Petr

AU - Koroleva, Aleksandra

AU - Zhizhin, Evgeniy

PY - 2024/1/1

Y1 - 2024/1/1

N2 - The photoelectric and structural properties of In2O3-Ga2O3 composite films deposited by halide vapor phase epitaxy on sapphire substrates were investigated. The deposited films were a composite of cubic c-In2O3 and δ-Ga2O3 phases with a low content (InxGa1-x)2O2.4 solid solution deficient in oxygen phase at the surface region. The spectral dependencies of the responsivity, external quantum efficiency and detectivity were studied in the wavelength interval from 205 nm to 360 nm. The In2O3-Ga2O3 composite films demonstrated high photosensitivity, low base resistance and wide spectral interval of sensitivity including UV-C, UV-B and UV-A wavelength ranges. The maximum external quantum efficiency and responsivity of the In2O3-Ga2O3 composite films achieved under radiation exposure at a wavelength of 214 nm and electric field strength of 1 kV/cm were 3.8×105 % and 660 A/W, respectively. A mechanism for the high photosensitivity of the In2O3-Ga2O3 composite films based on the bipolar generation of charge carriers mainly in the segregated regions of the δ-Ga2O3 phase is proposed.

AB - The photoelectric and structural properties of In2O3-Ga2O3 composite films deposited by halide vapor phase epitaxy on sapphire substrates were investigated. The deposited films were a composite of cubic c-In2O3 and δ-Ga2O3 phases with a low content (InxGa1-x)2O2.4 solid solution deficient in oxygen phase at the surface region. The spectral dependencies of the responsivity, external quantum efficiency and detectivity were studied in the wavelength interval from 205 nm to 360 nm. The In2O3-Ga2O3 composite films demonstrated high photosensitivity, low base resistance and wide spectral interval of sensitivity including UV-C, UV-B and UV-A wavelength ranges. The maximum external quantum efficiency and responsivity of the In2O3-Ga2O3 composite films achieved under radiation exposure at a wavelength of 214 nm and electric field strength of 1 kV/cm were 3.8×105 % and 660 A/W, respectively. A mechanism for the high photosensitivity of the In2O3-Ga2O3 composite films based on the bipolar generation of charge carriers mainly in the segregated regions of the δ-Ga2O3 phase is proposed.

KW - Chemicals

KW - Detectors

KW - Films

KW - Indium oxide

KW - Sea measurements

KW - Solids

KW - Substrates

KW - Three-dimensional displays

KW - composite films

KW - external quantum efficiency

KW - gallium oxide

KW - halide vapor phase epitaxy

KW - ultraviolet detector

UR - https://www.mendeley.com/catalogue/6cf7f34a-7ddc-3d81-b4ab-56ad2695e3c9/

U2 - 10.1109/JSEN.2024.3427867

DO - 10.1109/JSEN.2024.3427867

M3 - Article

SP - 1

EP - 1

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

SN - 1530-437X

ER -

ID: 121973491