Research output: Contribution to journal › Article › peer-review
UV detectors based on In2O3Ga2O3 composite films. / Almaev, Aleksei; Almaev, Dmitry; Nikolaev, Vladimir; Scheglov, Mikhail; Chikiryaka, Andrei; Pechnikov, Alexei; Kosmachev, Pavel; Korusenko, Petr; Koroleva, Aleksandra; Zhizhin, Evgeniy.
In: IEEE Sensors Journal, Vol. 24, No. 17, 01.09.2024, p. 27401-27410.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - UV detectors based on In2O3Ga2O3 composite films
AU - Almaev, Aleksei
AU - Almaev, Dmitry
AU - Nikolaev, Vladimir
AU - Scheglov, Mikhail
AU - Chikiryaka, Andrei
AU - Pechnikov, Alexei
AU - Kosmachev, Pavel
AU - Korusenko, Petr
AU - Koroleva, Aleksandra
AU - Zhizhin, Evgeniy
PY - 2024/9/1
Y1 - 2024/9/1
N2 - The photoelectric and structural properties of In2O3-Ga2O3 composite films deposited by halide vapor phase epitaxy on sapphire substrates were investigated. The deposited films were a composite of cubic c-In2O3 and δ-Ga2O3 phases with a low content (InxGa1-x)2O2.4 solid solution deficient in oxygen phase at the surface region. The spectral dependencies of the responsivity, external quantum efficiency and detectivity were studied in the wavelength interval from 205 nm to 360 nm. The In2O3-Ga2O3 composite films demonstrated high photosensitivity, low base resistance and wide spectral interval of sensitivity including UV-C, UV-B and UV-A wavelength ranges. The maximum external quantum efficiency and responsivity of the In2O3-Ga2O3 composite films achieved under radiation exposure at a wavelength of 214 nm and electric field strength of 1 kV/cm were 3.8×105 % and 660 A/W, respectively. A mechanism for the high photosensitivity of the In2O3-Ga2O3 composite films based on the bipolar generation of charge carriers mainly in the segregated regions of the δ-Ga2O3 phase is proposed.
AB - The photoelectric and structural properties of In2O3-Ga2O3 composite films deposited by halide vapor phase epitaxy on sapphire substrates were investigated. The deposited films were a composite of cubic c-In2O3 and δ-Ga2O3 phases with a low content (InxGa1-x)2O2.4 solid solution deficient in oxygen phase at the surface region. The spectral dependencies of the responsivity, external quantum efficiency and detectivity were studied in the wavelength interval from 205 nm to 360 nm. The In2O3-Ga2O3 composite films demonstrated high photosensitivity, low base resistance and wide spectral interval of sensitivity including UV-C, UV-B and UV-A wavelength ranges. The maximum external quantum efficiency and responsivity of the In2O3-Ga2O3 composite films achieved under radiation exposure at a wavelength of 214 nm and electric field strength of 1 kV/cm were 3.8×105 % and 660 A/W, respectively. A mechanism for the high photosensitivity of the In2O3-Ga2O3 composite films based on the bipolar generation of charge carriers mainly in the segregated regions of the δ-Ga2O3 phase is proposed.
KW - Chemicals
KW - Detectors
KW - Films
KW - Indium oxide
KW - Sea measurements
KW - Solids
KW - Substrates
KW - Three-dimensional displays
KW - composite films
KW - external quantum efficiency
KW - gallium oxide
KW - halide vapor phase epitaxy
KW - ultraviolet detector
KW - indium oxide
KW - Composite films
UR - https://www.mendeley.com/catalogue/6cf7f34a-7ddc-3d81-b4ab-56ad2695e3c9/
U2 - 10.1109/JSEN.2024.3427867
DO - 10.1109/JSEN.2024.3427867
M3 - Article
VL - 24
SP - 27401
EP - 27410
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
SN - 1530-437X
IS - 17
ER -
ID: 121973491