Результаты исследований: Научные публикации в периодических изданиях › статья
"Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation. / Davydov, V.; Ignatiev, I.V.; Kozin, I.E.; Lee, J.-S.; Ren, H.-W.; Sugou, S.; Masumoto, Y.
в: Journal of Luminescence, Том 87-89, 2000, стр. 522-524.Результаты исследований: Научные публикации в периодических изданиях › статья
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TY - JOUR
T1 - "Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation
AU - Davydov, V.
AU - Ignatiev, I.V.
AU - Kozin, I.E.
AU - Lee, J.-S.
AU - Ren, H.-W.
AU - Sugou, S.
AU - Masumoto, Y.
PY - 2000
Y1 - 2000
N2 - An `unusuala thermal behavior was observed in the photoluminescence of self-assembled III}V quantum dots under quasi-resonant excitation. The e!ect manifests itself as a prominent increase of the PL intensity at elevated temperatures, both in Stokes and anti-Stokes parts of spectra. This e!ect is observable in both InP and InGaAs quantum dots. A simple general model of spectral di!usion is proposed to explain this phenomenon.
AB - An `unusuala thermal behavior was observed in the photoluminescence of self-assembled III}V quantum dots under quasi-resonant excitation. The e!ect manifests itself as a prominent increase of the PL intensity at elevated temperatures, both in Stokes and anti-Stokes parts of spectra. This e!ect is observable in both InP and InGaAs quantum dots. A simple general model of spectral di!usion is proposed to explain this phenomenon.
M3 - статья
VL - 87-89
SP - 522
EP - 524
JO - Journal of Luminescence
JF - Journal of Luminescence
SN - 0022-2313
ER -
ID: 5328117