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"Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation. / Davydov, V.; Ignatiev, I.V.; Kozin, I.E.; Lee, J.-S.; Ren, H.-W.; Sugou, S.; Masumoto, Y.

In: Journal of Luminescence, Vol. 87-89, 2000, p. 522-524.

Research output: Contribution to journal › Article

Harvard

Davydov, V, Ignatiev, IV, Kozin, IE, Lee, J-S, Ren, H-W, Sugou, S & Masumoto, Y 2000, '"Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation', Journal of Luminescence, vol. 87-89, pp. 522-524.

APA

Davydov, V., Ignatiev, I. V., Kozin, I. E., Lee, J-S., Ren, H-W., Sugou, S., & Masumoto, Y. (2000). "Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation. Journal of Luminescence, 87-89, 522-524.

Vancouver

Davydov V, Ignatiev IV, Kozin IE, Lee J-S, Ren H-W, Sugou S et al. "Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation. Journal of Luminescence. 2000;87-89:522-524.

Author

Davydov, V. ; Ignatiev, I.V. ; Kozin, I.E. ; Lee, J.-S. ; Ren, H.-W. ; Sugou, S. ; Masumoto, Y. / "Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation. In: Journal of Luminescence. 2000 ; Vol. 87-89. pp. 522-524.

BibTeX

@article{a680e0ebdb294acc8f9eafbc5316ab6d,
title = "{"}Unusual{"} temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation",
abstract = "An `unusuala thermal behavior was observed in the photoluminescence of self-assembled III}V quantum dots under quasi-resonant excitation. The e!ect manifests itself as a prominent increase of the PL intensity at elevated temperatures, both in Stokes and anti-Stokes parts of spectra. This e!ect is observable in both InP and InGaAs quantum dots. A simple general model of spectral di!usion is proposed to explain this phenomenon.",
author = "V. Davydov and I.V. Ignatiev and I.E. Kozin and J.-S. Lee and H.-W. Ren and S. Sugou and Y. Masumoto",
year = "2000",
language = "не определен",
volume = "87-89",
pages = "522--524",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - "Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation

AU - Davydov, V.

AU - Ignatiev, I.V.

AU - Kozin, I.E.

AU - Lee, J.-S.

AU - Ren, H.-W.

AU - Sugou, S.

AU - Masumoto, Y.

PY - 2000

Y1 - 2000

N2 - An `unusuala thermal behavior was observed in the photoluminescence of self-assembled III}V quantum dots under quasi-resonant excitation. The e!ect manifests itself as a prominent increase of the PL intensity at elevated temperatures, both in Stokes and anti-Stokes parts of spectra. This e!ect is observable in both InP and InGaAs quantum dots. A simple general model of spectral di!usion is proposed to explain this phenomenon.

AB - An `unusuala thermal behavior was observed in the photoluminescence of self-assembled III}V quantum dots under quasi-resonant excitation. The e!ect manifests itself as a prominent increase of the PL intensity at elevated temperatures, both in Stokes and anti-Stokes parts of spectra. This e!ect is observable in both InP and InGaAs quantum dots. A simple general model of spectral di!usion is proposed to explain this phenomenon.

M3 - статья

VL - 87-89

SP - 522

EP - 524

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

ER -

ID: 5328117