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Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy. / Verma, Isha; Zannier, Valentina; Dubrovskii, Vladimir G.; Beltram, Fabio; Sorba, Lucia.

в: Nanomaterials, Том 12, № 7, 1090, 26.03.2022.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Verma, I, Zannier, V, Dubrovskii, VG, Beltram, F & Sorba, L 2022, 'Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy', Nanomaterials, Том. 12, № 7, 1090. https://doi.org/10.3390/nano12071090

APA

Verma, I., Zannier, V., Dubrovskii, V. G., Beltram, F., & Sorba, L. (2022). Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy. Nanomaterials, 12(7), [1090]. https://doi.org/10.3390/nano12071090

Vancouver

Verma I, Zannier V, Dubrovskii VG, Beltram F, Sorba L. Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy. Nanomaterials. 2022 Март 26;12(7). 1090. https://doi.org/10.3390/nano12071090

Author

Verma, Isha ; Zannier, Valentina ; Dubrovskii, Vladimir G. ; Beltram, Fabio ; Sorba, Lucia. / Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy. в: Nanomaterials. 2022 ; Том 12, № 7.

BibTeX

@article{88fc95ff1340425f8686cd501da798b0,
title = "Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy",
abstract = "InSb nanoflags are grown by chemical beam epitaxy in regular arrays on top of Au-catalyzed InP nanowires synthesized on patterned SiO2/InP(111)B substrates. Two-dimensional geometry of the nanoflags is achieved by stopping the substrate rotation in the step of the InSb growth. Evolution of the nanoflag length, thickness and width with the growth time is studied for different pitches (distances in one of the two directions of the substrate plane). A model is presented which explains the observed non-linear time dependence of the nanoflag length, saturation of their thickness and gradual increase in the width by the shadowing effect for re-emitted Sb flux. These results might be useful for morphological control of InSb and other III-V nanoflags grown in regular arrays.",
keywords = "chemical beam epitaxy, growth modeling, InP nanowires, InSb nanoflags, regular array",
author = "Isha Verma and Valentina Zannier and Dubrovskii, {Vladimir G.} and Fabio Beltram and Lucia Sorba",
note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",
year = "2022",
month = mar,
day = "26",
doi = "10.3390/nano12071090",
language = "English",
volume = "12",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "7",

}

RIS

TY - JOUR

T1 - Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy

AU - Verma, Isha

AU - Zannier, Valentina

AU - Dubrovskii, Vladimir G.

AU - Beltram, Fabio

AU - Sorba, Lucia

N1 - Publisher Copyright: © 2022 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2022/3/26

Y1 - 2022/3/26

N2 - InSb nanoflags are grown by chemical beam epitaxy in regular arrays on top of Au-catalyzed InP nanowires synthesized on patterned SiO2/InP(111)B substrates. Two-dimensional geometry of the nanoflags is achieved by stopping the substrate rotation in the step of the InSb growth. Evolution of the nanoflag length, thickness and width with the growth time is studied for different pitches (distances in one of the two directions of the substrate plane). A model is presented which explains the observed non-linear time dependence of the nanoflag length, saturation of their thickness and gradual increase in the width by the shadowing effect for re-emitted Sb flux. These results might be useful for morphological control of InSb and other III-V nanoflags grown in regular arrays.

AB - InSb nanoflags are grown by chemical beam epitaxy in regular arrays on top of Au-catalyzed InP nanowires synthesized on patterned SiO2/InP(111)B substrates. Two-dimensional geometry of the nanoflags is achieved by stopping the substrate rotation in the step of the InSb growth. Evolution of the nanoflag length, thickness and width with the growth time is studied for different pitches (distances in one of the two directions of the substrate plane). A model is presented which explains the observed non-linear time dependence of the nanoflag length, saturation of their thickness and gradual increase in the width by the shadowing effect for re-emitted Sb flux. These results might be useful for morphological control of InSb and other III-V nanoflags grown in regular arrays.

KW - chemical beam epitaxy

KW - growth modeling

KW - InP nanowires

KW - InSb nanoflags

KW - regular array

UR - http://www.scopus.com/inward/record.url?scp=85127122554&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/3bfc6215-deff-3404-871f-c6b0072eefb2/

U2 - 10.3390/nano12071090

DO - 10.3390/nano12071090

M3 - Article

C2 - 35407207

AN - SCOPUS:85127122554

VL - 12

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 7

M1 - 1090

ER -

ID: 95040742