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Transport properties of thermally oxidized porous silicon. / Grigor'ev, L. V.; Grigor'ev, I. M.; Zamoryanskaya, M. V.; Sokolov, V. I.; Sorokin, L. M.

в: Technical Physics Letters, Том 32, № 9, 09.2006, стр. 750-753.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Grigor'ev, LV, Grigor'ev, IM, Zamoryanskaya, MV, Sokolov, VI & Sorokin, LM 2006, 'Transport properties of thermally oxidized porous silicon', Technical Physics Letters, Том. 32, № 9, стр. 750-753. https://doi.org/10.1134/S1063785006090057

APA

Grigor'ev, L. V., Grigor'ev, I. M., Zamoryanskaya, M. V., Sokolov, V. I., & Sorokin, L. M. (2006). Transport properties of thermally oxidized porous silicon. Technical Physics Letters, 32(9), 750-753. https://doi.org/10.1134/S1063785006090057

Vancouver

Grigor'ev LV, Grigor'ev IM, Zamoryanskaya MV, Sokolov VI, Sorokin LM. Transport properties of thermally oxidized porous silicon. Technical Physics Letters. 2006 Сент.;32(9):750-753. https://doi.org/10.1134/S1063785006090057

Author

Grigor'ev, L. V. ; Grigor'ev, I. M. ; Zamoryanskaya, M. V. ; Sokolov, V. I. ; Sorokin, L. M. / Transport properties of thermally oxidized porous silicon. в: Technical Physics Letters. 2006 ; Том 32, № 9. стр. 750-753.

BibTeX

@article{7f6997c1a2804592b765456e086cad22,
title = "Transport properties of thermally oxidized porous silicon",
abstract = "The process of current transfer in thermally oxidized porous silicon has been studied. A model based on the combination of hopping and tunneling mechanisms of charge transport is proposed. The concentration of charge traps and the mobility of charge carriers are evaluated using the current-voltage characteristics measured at 100 and 300 K.",
author = "Grigor'ev, {L. V.} and Grigor'ev, {I. M.} and Zamoryanskaya, {M. V.} and Sokolov, {V. I.} and Sorokin, {L. M.}",
note = "Funding Information: Acknowledgments. This study was supported in part by the Department of Physical Sciences of the Russian Academy of Sciences (Program “Novel Materials and Structures”) and by the Presidium of the Russian Academy of Sciences (Program “Effect of Atomic and Crystalline Structure on the Properties of Condensed Media”).",
year = "2006",
month = sep,
doi = "10.1134/S1063785006090057",
language = "English",
volume = "32",
pages = "750--753",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "9",

}

RIS

TY - JOUR

T1 - Transport properties of thermally oxidized porous silicon

AU - Grigor'ev, L. V.

AU - Grigor'ev, I. M.

AU - Zamoryanskaya, M. V.

AU - Sokolov, V. I.

AU - Sorokin, L. M.

N1 - Funding Information: Acknowledgments. This study was supported in part by the Department of Physical Sciences of the Russian Academy of Sciences (Program “Novel Materials and Structures”) and by the Presidium of the Russian Academy of Sciences (Program “Effect of Atomic and Crystalline Structure on the Properties of Condensed Media”).

PY - 2006/9

Y1 - 2006/9

N2 - The process of current transfer in thermally oxidized porous silicon has been studied. A model based on the combination of hopping and tunneling mechanisms of charge transport is proposed. The concentration of charge traps and the mobility of charge carriers are evaluated using the current-voltage characteristics measured at 100 and 300 K.

AB - The process of current transfer in thermally oxidized porous silicon has been studied. A model based on the combination of hopping and tunneling mechanisms of charge transport is proposed. The concentration of charge traps and the mobility of charge carriers are evaluated using the current-voltage characteristics measured at 100 and 300 K.

UR - http://www.scopus.com/inward/record.url?scp=33749238505&partnerID=8YFLogxK

U2 - 10.1134/S1063785006090057

DO - 10.1134/S1063785006090057

M3 - Article

AN - SCOPUS:33749238505

VL - 32

SP - 750

EP - 753

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 9

ER -

ID: 86118350