Standard

Theory of MBE Growth of Nanowires on Reflecting Substrates. / Dubrovskii, Vladimir G.

в: Nanomaterials, Том 12, № 2, 253, 14.01.2022.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

APA

Vancouver

Author

BibTeX

@article{55bc69d563a24d7fbf10e3d147889a46,
title = "Theory of MBE Growth of Nanowires on Reflecting Substrates",
abstract = "Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and related epitaxy techniques offer several advantages over growth on unpatterned substrates. Here, an analytic model for the total flux of group III atoms impinging NWs is presented, which accounts for specular re-emission from the mask surface and the shadowing effect in the absence of surface diffusion from the substrate. An expression is given for the shadowing length of NWs corresponding to the full shadowing of the mask. Axial and radial NW growths are considered in different stages, including the stage of purely axial growth, intermediate stage with radial growth, and asymptotic stage, where the NWs receive the maximum flux determined by the array pitch. The model provides good fits with the data obtained for different vapor–liquid–solid and catalyst-free III-V NWs.",
keywords = "III-V nanowires, Modeling, Molecular beam epitaxy, Nanowire length and radius, Re-emission, Reflecting substrate, Shadowing",
author = "Dubrovskii, {Vladimir G.}",
note = "Publisher Copyright: {\textcopyright} 2022 by the author. Licensee MDPI, Basel, Switzerland.",
year = "2022",
month = jan,
day = "14",
doi = "10.3390/nano12020253",
language = "English",
volume = "12",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "2",

}

RIS

TY - JOUR

T1 - Theory of MBE Growth of Nanowires on Reflecting Substrates

AU - Dubrovskii, Vladimir G.

N1 - Publisher Copyright: © 2022 by the author. Licensee MDPI, Basel, Switzerland.

PY - 2022/1/14

Y1 - 2022/1/14

N2 - Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and related epitaxy techniques offer several advantages over growth on unpatterned substrates. Here, an analytic model for the total flux of group III atoms impinging NWs is presented, which accounts for specular re-emission from the mask surface and the shadowing effect in the absence of surface diffusion from the substrate. An expression is given for the shadowing length of NWs corresponding to the full shadowing of the mask. Axial and radial NW growths are considered in different stages, including the stage of purely axial growth, intermediate stage with radial growth, and asymptotic stage, where the NWs receive the maximum flux determined by the array pitch. The model provides good fits with the data obtained for different vapor–liquid–solid and catalyst-free III-V NWs.

AB - Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and related epitaxy techniques offer several advantages over growth on unpatterned substrates. Here, an analytic model for the total flux of group III atoms impinging NWs is presented, which accounts for specular re-emission from the mask surface and the shadowing effect in the absence of surface diffusion from the substrate. An expression is given for the shadowing length of NWs corresponding to the full shadowing of the mask. Axial and radial NW growths are considered in different stages, including the stage of purely axial growth, intermediate stage with radial growth, and asymptotic stage, where the NWs receive the maximum flux determined by the array pitch. The model provides good fits with the data obtained for different vapor–liquid–solid and catalyst-free III-V NWs.

KW - III-V nanowires

KW - Modeling

KW - Molecular beam epitaxy

KW - Nanowire length and radius

KW - Re-emission

KW - Reflecting substrate

KW - Shadowing

UR - http://www.scopus.com/inward/record.url?scp=85122861319&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/575e376d-62ca-3ec0-8d11-e914f28e3c71/

U2 - 10.3390/nano12020253

DO - 10.3390/nano12020253

M3 - Article

AN - SCOPUS:85122861319

VL - 12

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 2

M1 - 253

ER -

ID: 95041097